2017
DOI: 10.1021/acs.jpcc.7b06455
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Influence of Thermal Annealing on Free Carrier Concentration in (GaN)1–x(ZnO)x Semiconductors

Abstract: It was previously demonstrated that the efficiency of (GaN)1–x (ZnO) x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN)1–x (ZnO) x . The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sen… Show more

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Cited by 12 publications
(9 citation statements)
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“…In other words, the glass transition evolution does not occur at the same specic volume, which is consistent with a recent experimental observation by Huang & Roth that examined the temperature-dependent specic volume of supported polystyrene with lm thickness. 80 In addition, there is generally also a reduced difference between the liquid-and glassy-state slopes in a thinner lm as compared to its bulker counterpart, indicating a reduction in the strength of glass transition upon nanoconnement, a behavior also seen in previously published literature by Kawana & Jones and Ellison & Torkelson. 81,82 The plot of glass transition temperatures versus PSF membrane thickness is provided in Fig.…”
Section: Glass Transition Temperaturesupporting
confidence: 52%
“…In other words, the glass transition evolution does not occur at the same specic volume, which is consistent with a recent experimental observation by Huang & Roth that examined the temperature-dependent specic volume of supported polystyrene with lm thickness. 80 In addition, there is generally also a reduced difference between the liquid-and glassy-state slopes in a thinner lm as compared to its bulker counterpart, indicating a reduction in the strength of glass transition upon nanoconnement, a behavior also seen in previously published literature by Kawana & Jones and Ellison & Torkelson. 81,82 The plot of glass transition temperatures versus PSF membrane thickness is provided in Fig.…”
Section: Glass Transition Temperaturesupporting
confidence: 52%
“…Consequently, for the growth of highly Zn-rich samples, postannealing of the material seems to be a more promising approach to improve the crystal quality, as it preserves the overall composition. 34 One of the most interesting open questions concerning the GZNO material system is to identify which mechanism leads to the observed band gap reduction compared to GaN or ZnO, specifically in terms of the individual roles of each of the different atomic species. Unambiguous elucidation of the underlying origin of the band gap reduction will provide opportunities for band gap engineering while preserving the beneficial energetic position of the CB edge, which is crucial for optimizing photocatalytic efficiencies.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…In vitro release of CHX-dg, from the thermally inducedgelling system presented in this study, was evaluated under experimental conditions, which mimic those of periodontal pocket, in terms of temperature, pH, and ionic force. [40,41] CHX-dg release from the system: Poloxamer (bCD-Jef-MPs/CHX-dg) was compared to those of (i) Poloxamer(bCD-MPs/CHX-dg), a Jeffamine-free control system, and (ii) Poloxamer(CHX-dg), where CHX-dg was directly suspended in the sol-gel matrix. The aim was to understand the role of Jeffamine segments and bCD units in the modulation of CHX-dg release profile, respectively.…”
Section: In Vitro Chx-dg Release Testmentioning
confidence: 99%