2017
DOI: 10.1007/s10765-017-2190-1
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Influence of Thermal Annealings in Argon on the Structural and Thermochromic Properties of $$\mathrm{MoO}_{3}$$ MoO 3 Thin Films

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Cited by 20 publications
(5 citation statements)
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“…For MoO 3 thin films, the slight increase in E gap with the annealing temperature has also been observed by other groups, which have deposited this oxide by different synthesis techniques. This effect has been associated with a structural rearrangement of the MoO 3 lattice, specifically a reduction of point defects . In addition, our group recently found that the crystallization process in MoO 3 takes place at higher temperatures, with respect to annealing in air, when the thermal treatments are performed in inert atmospheres. , This information implies that, for the SMC system, the CdSe layer causes a slow rearrangement process in the MoO 3 lattice as compared to the case where MoO 3 is directly exposed to oxygen. For all of the irradiated samples, the band-gap energy remains essentially constant (see Figure b).…”
Section: Resultssupporting
confidence: 63%
See 1 more Smart Citation
“…For MoO 3 thin films, the slight increase in E gap with the annealing temperature has also been observed by other groups, which have deposited this oxide by different synthesis techniques. This effect has been associated with a structural rearrangement of the MoO 3 lattice, specifically a reduction of point defects . In addition, our group recently found that the crystallization process in MoO 3 takes place at higher temperatures, with respect to annealing in air, when the thermal treatments are performed in inert atmospheres. , This information implies that, for the SMC system, the CdSe layer causes a slow rearrangement process in the MoO 3 lattice as compared to the case where MoO 3 is directly exposed to oxygen. For all of the irradiated samples, the band-gap energy remains essentially constant (see Figure b).…”
Section: Resultssupporting
confidence: 63%
“…30 In addition, our group recently found that the crystallization process in MoO 3 takes place at higher temperatures, with respect to annealing in air, when the thermal treatments are performed in inert atmospheres. 25,33 This information implies that, for the SMC system, the CdSe layer causes a slow rearrangement process in the MoO 3 lattice as compared to the case where MoO 3 is directly exposed to oxygen. For all of the irradiated samples, the band-gap energy remains essentially constant (see Figure 7b).…”
Section: Resultsmentioning
confidence: 99%
“…According to the obtained results, the intensification of the SPR signal could be attributed to the presence of these three properties. In previous works has been demonstrated that the β -phase has a sub-stoichiometric amorphous structure associated with oxygen vacancies in the MoO 3 matrix 30,44 unlike the α -phase where its crystalline domain is bigger and available oxygen vacancies are less than β -phase 44 . The importance of oxygen vacancies to explain the increase in the SPR signal is of the utmost importance since these vacancies would function as electron traps, which could be absorbed the generated resonant electrons.…”
Section: Analysis and Resultsmentioning
confidence: 99%
“…The sample deposited with the flow rate ratio of 0.48 O 2 /Ar showed a broadened band, centered at 2θ ≈ 35 , which suggested a coexistence between an amorphous structure and some few nanocrystallites dispensed in the matrix. At the flow rate ratio of 0.56 O 2 /Ar, corresponding to the second series of depositions, the diffractogram pattern showed in Figure 1 b, with broadband centered at 2θ ≈ 25 , confirmed the formation of an amorphous structure based on the MoOx units [ 38 , 39 , 40 ]. In the samples grown in silicon, the intensity of the peak corresponding to silicon was observed only on samples with sputtering time below 60 min, which inferred a lower sample thickness.…”
Section: Resultsmentioning
confidence: 92%