Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

Navamathavan, R.; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu

doi:10.1016/j.apsusc.2007.04.075

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…For example, a matrix of methyltrimethoxysilane (MTMS) combined with various oxycarbosiloxanes is used commercially for interconnect layers in BEOL processing for the 32 nm node and below [3,4]. The oxycarbosiloxane precursor creates carbon bridges within the silica network to add strength to accommodate higher porosity.…”

Section: Introductionmentioning

confidence: 99%

Dielectric behavior of organically modified siloxane melting gels

Gambino¹,

Jitianu²,

Klein³

2012

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Dielectric behavior of organically modified siloxane melting gels

Gambino¹,

Jitianu²,

Klein³

2012

Journal of Non-Crystalline Solids

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“…Moreover, it is noted that as the annealing temperature increases, the intensity of the shoulder peak corresponding to the Si-O-C configuration decreases and the peak of the Si-O-Si configuration remains unchanged. This is due to the rearrangement of the chemical bonds in the film, such as the dissociation of the Si-O-C x H y bonds during the annealing process [12], thus resulting in the formation of dense cross-linked matrix after segregation of some hydrocarbon groups attached to the pore wall. However, the peak associated with the Si-CH 3 stretching mode at 1270 cm −1 is retained after annealing at 420 °C.…”

Section: Resultsmentioning

confidence: 99%

“…In terms of plasma-enhanced chemical vapor deposition (PECVD) of low-k SiOCH films, different organosilicate precursors have been employed, such as methyltrimethoxysilane, bistrimethylsilymethane, dimethyldimethoxysilane, methyltriethoxysilane, trimethylsilcane and diethoxymethylsilane (DEMS) [12][13][14][15][18][19][20]. In order to obtain porous low-k films with good mechanical properties by the porogenintroduced PECVD approach, the matrix should be strong enough to avoid collapse after removal of the porogen species.…”

Section: Introductionmentioning

confidence: 99%

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Ding

Wang

Liu

et al. 2018

J. Phys. D: Appl. Phys.

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Ultralow dielectric-constant (k) SiOCH films were prepared from triethoxymethylsilane (MTES) and cinene (LIMO) by plasma-enhanced chemical vapor deposition (PECVD). By changing the mass flow rate ratio (MFRR) of LIMO/MTES, the properties of the low k films were investigated. In particular, the chemical composition and bonding structure of the deposited film were analyzed with the help of Fourier transforms infrared spectroscopy and x-ray photoelectron spectroscopy. It was revealed that the bonding configurations of O-Si-C 3 , O 2 -Si-C 2 , Si-C and C-C/C-H in the low-k film increased with increasing the MFRR of LIMO/MTES. Further, as the MFRR increased from 1.0 to 1.5, the k value decreased gradually to 2.3, and then increased again with a continuing increment of the MFRR. Such changes accorded with the evolvement of porosity within the film. In the case of our interested ultralow k film (k = 2.3) with a maximum porosity of 29.1%, it exhibited a very low leakage current density of 3.35 × 10 −9 A cm −2 at 1 MV cm −1 and 25 °C while maintaining good mechanical properties such as an Young's modulus of 4.26 GPa and a hardness of 0.41 GPa.

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“…To study the bonding configuration of the SiOCH film network, we analyzed the absorbance between 950 and 1250 cm −1 , referring to Grill et al, 11 Wong et al, 12 Yang et al, 13,14 and Navamathavan et al 15,16 the results of which are shown in Fig. 6a-d The structure of spectrum ͑v͒ is unidentified here.…”

Section: Resultsmentioning

confidence: 99%

Paramagnetic Defect Generation and Microstructure Change in Porous Low-k SiOCH Films with Vacuum Baking

Tanbara

Kamigaki

2010

J. Electrochem. Soc.

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We studied in detail the paramagnetic defect generated in the porous low-k SiOCH films, which is called the T b center with the oxygen-carbon mixed back bonds. We baked the SiOCH films in vacuum from 600 to 1000°C, which could correspond to temperature elevation at a local area in cases of UV or electron-beam curing and Joule heating in circuits. The amount of the T b center increased abruptly around 775°C by electron spin resonance spectroscopy, at which we observed 30% volume shrinkage by ellipsometry and network change from a cage link to a ring link by Fourier transform IR spectroscopy. These phenomena might be due to the crush of microholes wrapping Si-CH 3 end groups. Therefore, we consider that the generation of the T b center suggests the quality change of the porous low-k SiOCH films for the ultralarge-scale integration reliability.As device densities increase in ultralarge-scale integration ͑ULSI͒ semiconductor chips, the signal propagation delay in multilevel interconnects becomes more critical for device performance. SiOCH films ͑silicon oxide containing hydrocarbon groups, k = 3.0͒ have been used for the low-dielectric-constant ͑low-k͒ dielectrics of the most advanced ULSI interconnects because of their high compatibility with the silicon process. 1 Recently, the nanometer level pores in a SiOCH film have been introduced to reduce k ͑Ͻ2.7͒. 2 The porous low-k SiOCH films have a lower mechanical strength than the conventional dielectric films. So, the porous SiOCH films were cured by UV light exposure or electron-beam ͑EB͒ irradiation to enhance mechanical strength. 3,4 However, the defects, called the T b centers having oxygen-carbon mixed back bonds, can be generated in the porous SiOCH films by excess UV/EB curing. 3,5-7 The generation of paramagnetic defect ͑T b center͒ is thought to be one of the ULSI interconnect reliability issues. In this work, we investigated in detail the behavior of the T b center in the porous low-k SiOCH films using vacuum baking instead of UV/EB curing. UV curing ͑high energy photon; about 5 eV͒ corresponds to local annealing, and vacuum baking ͑low energy phonon; at most 0.1 eV͒ corresponds to uniform annealing. Both processes are thought to give rise to the same microstructure change. We used an electron spin resonance ͑ESR͒ technique to detect the defects, ellipsometry to measure the film thickness and refractive index, and Fourier transform infrared ͑FTIR͒ spectroscopy to analyze the atomic network in the porous low-k SiOCH films. ExperimentalSample preparation.-The 500 nm thick, porous low-k SiOCH films ͑k = 2.6͒ were deposited on 300 mm ͑100͒ silicon wafers ͑10-15 ⍀ cm͒ with plasma-enhanced chemical vapor deposition. The film composition was determined to be Si:O:C:H = 1.0:1.7:0.9:2.9 by Rutherford backscattering analysis. 7 To actualize the defects in the low-k films, the samples were baked up to 1000°C in the vacuum chamber ͑15-25 Pa͒, where the samples were maintained at a certain setup temperature for 30 min and taken out below 300°C.Characterization.-The ESR m...

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Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

Cited by 8 publications

References 21 publications

Dielectric behavior of organically modified siloxane melting gels

Dielectric behavior of organically modified siloxane melting gels

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Paramagnetic Defect Generation and Microstructure Change in Porous Low-k SiOCH Films with Vacuum Baking

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