2019
DOI: 10.1007/s10854-019-01088-4
|View full text |Cite
|
Sign up to set email alerts
|

Influence of thiourea on electroless Ni–P films deposited on silicon substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2019
2019
2025
2025

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(1 citation statement)
references
References 2 publications
0
1
0
Order By: Relevance
“…Analysis was performed on at least five areas comprising 70% of the coating thickness, starting from the top of the coating. Despite the narrow sensitivity of the instrument, EDS was selected as a technique to determine the P quantity as reported in several works, because it is widely recognized as a technique for determining the amount of phosphorus in an electroless Ni-P system [15,22,24,27,28,30,31]. All the coated samples, unless otherwise stated, were thermally treated (right after the deposition) at 180 • C for 2 h in air to avoid hydrogen embrittlement phenomena [17,32,33]: such coatings will be referred to as as-coated hereafter.…”
Section: Solution and Coating Preparationmentioning
confidence: 99%
“…Analysis was performed on at least five areas comprising 70% of the coating thickness, starting from the top of the coating. Despite the narrow sensitivity of the instrument, EDS was selected as a technique to determine the P quantity as reported in several works, because it is widely recognized as a technique for determining the amount of phosphorus in an electroless Ni-P system [15,22,24,27,28,30,31]. All the coated samples, unless otherwise stated, were thermally treated (right after the deposition) at 180 • C for 2 h in air to avoid hydrogen embrittlement phenomena [17,32,33]: such coatings will be referred to as as-coated hereafter.…”
Section: Solution and Coating Preparationmentioning
confidence: 99%