Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO 2−x thin films

Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films

“…5 and 6. Similar type of behavior has already been observed by Bousoulas et al [28] who studied the effect of increasing thickness of top Ti electrode in TiO 2À x based memory devices. In addition, if the interface layer becomes too thick, charges trapped in it may produce their own field in a direction opposite to the externally applied field thereby increasing the forming/SET voltages (Fig.…”

“…Because of the oxygen gettering ability of Ti, a thicker Ti film as the top electrode may extract larger amount of oxygen ions from CeO 2 layer to form a relatively thicker interfacial TiO layer [27,28]. It means that so many oxygen ions may be absorbed there and due to relatively thicker TiO layer it becomes more difficult for oxygen ions to return back to dielectric CeO 2 layer.…”

Charge Transfer Characterization of ALD-Grown TiO2Protective Layers in Silicon Photocathodes

“…by some papers during the last decade [47][48][49][50][51] , and are attributed to ionic diffusion of the oxygen atoms due to polarization, leaving extra free charges (oxygen vacancies) which enhance the electronic conductivity 47 . Current flow through defects on the crystallographic structure can create local heating, enhancing ionic diffusion, and forming highly conductive paths or filaments, giving the LR state.…”

Tolerance against conducting filament formation in nanosheet-derived titania thin films

“…In addition, these films show poor switching as shown in figure 3(c), where the incomplete switching of the initial plot may be attributed to the incomplete movement of oxygen vacancies due to the short duration of the switching voltage application. On the contrary, Au-contacted titania thin films formed by other methods have been reported to show filamentary resistive switching with high switching ratios [29][30][31][32][33][34]. A plausible explanation of this difference is a lower expected density of oxygen vacancies in nanosheet-derived films.…”