Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE

Maßmeyer, Oliver; Nattermann, L.; Stolz, W.; Volz, Kerstin

doi:10.1016/j.apsusc.2018.07.098

Cited by 2 publications

(4 citation statements)

References 12 publications

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“…The increased N incorporation at higher TEGa partial pressures perhaps originates from a change in the surface reconstruction at low V/III ratios. At low V/III ratios the surface can change to a more Ga rich surface reconstruction. , For these more Ga rich surfaces an enhanced N incorporation has been predicted in the literature and some evidence for this has been seen for growth of Ga(N,As) on GaAs (001) surfaces. , The growth rate is increasing proportionally to the TEGa partial pressure due to the growth-limiting character of the group III supply in the group V rich growth regime.…”

Section: Resultsmentioning

confidence: 88%

“…One can also consider the influence of the surface reconstruction, which may change depending on the (N + P)/Ga ratio. A change of the surface reconstruction on the V/III ratio has been widely studied for GaAs (001) surfaces and is also seen for GaP (001) surfaces. − Even an increase in the N incorporation on more Ga rich surfaces has been seen for Ga(N,As) grown in GaAs as well as has been predicted for Ga(N,P). , The complete mechanism behind this incorporation behavior remains unclear and has to be investigated in the future in more detail. Furthermore, the growth rate does not seem to change, which is expected because of the same reasons mentioned before in the discussion of Figure .…”

Section: Resultsmentioning

confidence: 90%

“…28−31 Even an increase in the N incorporation on more Ga rich surfaces has been seen for Ga(N,As) grown in GaAs as well as has been predicted for Ga(N,P). 32,33 The complete mechanism behind this incorporation behavior remains unclear and has to be investigated in the future in more detail.…”

Section: Resultsmentioning

confidence: 99%

“…30,31 For these more Ga rich surfaces an enhanced N incorporation has been predicted in the literature and some evidence for this has been seen for growth of Ga(N,As) on GaAs (001) surfaces. 32,33 The growth rate is increasing proportionally to the TEGa partial pressure due to the growth-limiting character of the group III supply in the group V rich growth regime.…”

Section: Resultsmentioning

confidence: 99%

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Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

et al. 2020

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III/V semiconductors containing small amounts of nitrogen (dilute nitrides) are promising for applications such as lasers and solar cells. Metal−organic vapor-phase epitaxy (MOVPE) is a widely used technique for growing III/V semiconductors on an industrial scale, and the growth of dilute nitrides with this method is promising for later successful market entry. The main issues of dilute nitrides are carbon incorporation and low nitrogen incorporation efficiency of the conventional N precursors. Due to the high N incorporation efficiency and the low decomposition temperature of the As and N precursor di-tert-butylaminoarsane (DTBAA), a similar P-and N-containing precursor, di-tert-butylaminophosphane (DTBAP), was synthesized and purified on a laboratory scale. Growth studies using this precursor were carried out in this work realizing Ga(N,P)/GaP multi quantum wells on Si and GaP substrates. The structures show evidence of N incorporation, and good layer structures were confirmed by high-resolution X-ray diffraction. Following the influence of different growth parameters on the N incorporation, the growth rate and surface morphology were characterized to set a foundation for possible growth applications in the future. DTBAP shows many advantages over the conventional N source 1,1-dimethylhydrazine (UDMHy) such as a much lower decomposition temperature of 310 °C and the realization of Ga(N,P) layers grown at temperatures as low as 475 °C with a high N incorporation of over 10%. Furthermore, the gas-phase decomposition of DTBAP has been studied with a real-time fast Fourier transform quadrupole ion trap mass spectrometer attached inline to the MOVPE reactor. The decomposition of DTBAP behaves very similarly to the As analogue DTBAA. On the one hand, the tert-butyl groups attached to DTBAP decompose radically, leading to the formation of isobutane, and decompose, on the other hand, by β-H elimination, leading to the formation of isobutene. Furthermore, the decomposition products indicate a direct cleavage of the P−N bond of the molecule, resulting in the formation of aminyl radicals (NH 2• ). The formation of NH 2 • explains the high N incorporation efficiency of DTBAP at low temperatures as well as its limitations due to loss of NH 3 at higher temperatures.

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

et al. 2020

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In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE

Maßmeyer

Hepp

Günkel

et al. 2020

Applied Surface Science

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Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE

Cited by 2 publications

References 12 publications

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE

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Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE

Cited by 2 publications

References 12 publications

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE

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Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE