Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin‐Film Transistors

Abstract

high-throughput production [9][10][11][12] with good electrical/optical performances. [3][4][5] By implementing them as active semiconductor layers in thin-film transistors (TFTs), [1][2][3] transparent displays, [6,8,13] optoelectrical sensors, [1,5,14] neuromorphic devices, [15][16][17][18] and functional devices on flexible substrates [1,6,7] have been extensively demonstrated, implicating feasible practical applications for future electronic devices.

Effects of High-Energy X-ray Irradiation on the Electrical and Chemical Properties of In–Ga–Sn–O Thin Films with Al2O3Passivation Layer for Thin-Film Transistor Applications

“…Figure demonstrates the schematic illustration of the mechanism that can occur in the IGTO TFTs with and without the Al 2 O 3 passivation layer. In the case of the IGTO TFTs without the passivation layer, the charged V O states acting as shallow donor states can be generated in the IGTO channel layer by X-ray-induced ionizing radiation damage that causes ionization from V O to V O 2+ . , Simultaneously, the reactive oxygen species such as oxygen (O*) radicals that are generated by the X-ray irradiation in ambient air can react with V O defect sites in the IGTO channel layer and enhance the formation of the M-O chemical bond based on their excellent chemical reactivity and diffusivity . This can lead to the compensation of charged V O states in the IGTO channel layer and result in the insignificant change in the electrical performance of the device.…”

“…Meanwhile, these phenomena were not obviously observed in the IGTO TFTs passivated with the Al 2 O 3 passivation layer having d pass s of 0 to 15 nm after X-ray irradiation as shown in Figure 4a−c, as well as similar amounts of V O states in the IGTO thin films passivated with Al 2 O 3 passivation layer before and after X-ray irradiation observed in the XPS spectra in Figure 5a−c. Considering that high-energy X-ray irradiation can create the reactive oxygen species in ambient air, 48 the Al 2 O 3 -thickness-dependent variation in the IGTO TFTs under X-ray irradiation can be explained by the following mechanism. Figure 6 demonstrates the schematic illustration of the mechanism that can occur in the IGTO TFTs with and without the Al 2 O 3 passivation layer.…”

“…28,39 Simultaneously, the reactive oxygen species such as oxygen (O*) radicals that are generated by the X-ray irradiation in ambient air can react with V O defect sites in the IGTO channel layer and enhance the formation of the M-O chemical bond based on their excellent chemical reactivity and diffusivity. 48 This can lead to the compensation of charged V O states in the IGTO channel layer and result in the insignificant change in the electrical performance of the device. On the other hand, the presence of the Al 2 O 3 passivation layer can prevent the adsorption of reactive oxygen species to the IGTO channel layer and the V O compensation effect will be reduced with increasing the d pass s of the Al 2 O 3 passivation layer, inducing the increase in charged V O states and negative shifts of the V TH , as shown in Figure 4.…”

Surface Oxygen Vacancy Inducing Li‐Ion‐Conducting Percolation Network in Composite Solid Electrolytes for All‐Solid‐State Lithium‐Metal Batteries

“…These results suggest that UV-ozone treatment affects ITO NPs in two different ways; the reactive oxygen radicals via the reaction of O 2 with UV photons 1) fill the O vac sites on the surface (20 min), 2) decompose the MO bonds, resulting in more O vac (40 min). [59,60] Before fabricating the CSE using the UV-ozone treated ITO NPs, we measured the surface zeta-potential of each ITO NP in distilled water (pH 7) to verify the potential difference according to O vac concentration (Figure 6e). [61] The zeta-potential values of the non-treated, 20-min UV-ozone-treated, and 40-min UV-ozone-treated ITO NPs were +34.9, +27.9, and +32.9 mV, respectively.…”

Threshold voltage tuning of IGZTO thin-film transistors deposited by RF sputtering for high-resolution flexible displays using deep ultraviolet light

“…(i)Oxygen radicals (O*) generated by the decomposition of O 3 formed by the irradiation of DUV to oxygen in the air promote the formation of M–O bonds in the thin film. 11…”