Influence of Vacuum Environment on the Composition, Structure, and Mechanical Behavior of the Tantalum Tungsten Hafnium Alloy T-111

Abstract

A high-energy electron scattering study of the electronic structure and elemental composition of Oimplanted Ta films used for the fabrication of memristor devices J. Appl. Phys. 114, 073508 (2013); 10.1063/1.4818524 O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide