Influence of Zirconium doping on microstructure and dielectric properties of CaCu 3 Ti 4 O 12 synthesized by the sol–gel method

Sun, Li; Wang, Zhenduo; Hao, Wentao; Cao, Ensi; Zhang, Yongjia; Hua, Peng

doi:10.1016/j.jallcom.2015.08.111

Cited by 44 publications

(13 citation statements)

References 44 publications

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“…The ε′ value over the frequency range of 10 2 –10 6 Hz of NYCTO ceramics was independent of frequency and increased with increasing sintering time. This result is similar to that reported in literature for CCTO ceramics, where ε′ usually increased with increasing sintering time . However, the increase in ε′ for these samples was discrete.…”

Section: Resultssupporting

confidence: 91%

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Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

et al. 2016

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The dielectric and non‐Ohmic properties of Na1/2Y1/2Cu3Ti4O12 ceramics sintered under various conditions to obtain different microstructures were investigated. Microstructure analysis confirmed the presence of Na, Y, Cu, Ti, and O and these elements were well dispersed in the microstructure. Na1/2Y1/2Cu3Ti4O12 ceramics exhibited non‐Ohmic characteristics with large nonlinear coefficients of about 5.7–6.6 irrespectively of sintering conditions. The breakdown electric field of fine‐grained ceramic with the mean grain size of ≈1.7 μm (≈5600 V/cm) was much larger than those of the course‐grained ceramics with grain sizes of ≈9.5–10.4 μm (≈1850–2180 V/cm). Through optimization of sintering conditions, a low loss tangent of about 0.03 and very high dielectric permittivities of 18 000–23 000 with good temperature stability were successfully accomplished. The electrical responses of the grains and grain boundaries can, respectively, be well described using admittance and impedance spectroscopy analyses based on the brickwork layer model. A possible mechanism for the origin of semiconducting grains is discussed. The colossal dielectric response was reasonably described as closely correlated with the electrically heterogeneous microstructure by means of strong interfacial polarization at the insulating grain‐boundary layers. The non‐Ohmic properties of Na1/2Y1/2Cu3Ti4O12 ceramics were primarily related to their microstructure, i.e., grain size and volume fraction of grain boundaries.

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Section: Resultssupporting

confidence: 91%

“…This result is similar to that reported in literature for CCTO ceramics, where e 0 usually increased with increasing sintering time. 36 However, the increase in e 0 for these samples was discrete. First, the e 0 value significantly based ceramics.…”

Section: Methodsmentioning

confidence: 87%

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

et al. 2016

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“…Two responses can be observed in Z ′‐ f , which are denoted as the contributions from the grain boundaries at low frequencies and the grain/bulk at high frequencies. Only one response can be seen in Z ″‐ f , which is referred to as the grain boundary response due to the limits of the measurement processes . Impedance spectroscopy is a useful tool to analyze the resistivity and conductivity when long‐range conduction dominates because it provides information about the element with the elevated resistance.…”

Section: Resultsmentioning

confidence: 99%

“…Only one response can be seen in Z″-f, which is referred to as the grain boundary response due to the limits of the measurement processes. [39][40][41][42] Impedance spectroscopy is a useful tool to analyze the resistivity and conductivity when long-range conduction dominates because it provides information about the element with the elevated resistance. Therefore, it is easy to conclude that the R gb of CdZn x Cu 3−x Ti 4 O 12 ceramics is enhanced by Zn doping, as shown in Figure 5D.…”

Section: Resultsmentioning

confidence: 99%

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics

Peng

Liang

et al. 2019

J Am Ceram Soc

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Dielectric materials with ultrahigh permittivity are attracting attention due to the increasing demand for these types of materials for microelectronics and energy storage applications. In this work, we successfully synthesized Zn‐doped CdCu3Ti4O12 (CdCTO) ceramics with low dielectric loss and large permittivity via an ordinary mixed‐oxide technique. Remarkably, at a Zn doping level of 0.10, a CdCu2.9Zn0.1Ti4O12 ceramic exhibited both decreased dielectric loss tangent of ~0.058 and large dielectric permittivity > 4.0 × 104, as well as a good frequency stability over a wide frequency range from 40 Hz to 106 Hz. The high dielectric performance was attributed to the enhanced grain boundary resistance and internal barrier layer capacitor (IBLC) effect due to the fine and uniform grains that formed upon Zn doping. The findings reported in this work provide valuable insights into how to simultaneously realize a low dielectric loss and high permittivity in CdCTO and other related dielectric ceramics.

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“…Moreover, Zr doped In 2 O 3 thin films showed low resistivity (6.4×10 -4 Ω cm) and higher carrier concentration (2.5×10 20 ) at a doping ratio of 7 at.% (Manoharan et al, 2015) and at last but not at least Zr doped TiO 2 sprayed thin films pointed out an increase by more times of the dielectric constant with Zr doping (Juma et al, 2016). The list of various metal oxide materials that have been doped with zirconium is even longer and more informative Lin et al, 2015;Myung et al, 2015;Nicon et al, 2016;Pang et al, 2016;Saini et al, 2016;Shanmugam et al, 2014;Sun et al, 2015;Thongbai et al, 2014;Wei et al, 2015;Zhang et al, 2008 3,6,12, and 20 at.%. The resulting solution was sprayed at a rate flow of 4 mL/min using nitrogen gas.…”

Section: Introductionmentioning

confidence: 99%

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air

Saïd

Boughalmi

Inoubli

et al. 2017

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In this work further optical and electrical investigations of pure and Zr doped Mn 3 O 4 (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ω p , the relaxation time τ and the dielectric constant ε ∞ . Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form Mn 2 O 3 ones at 350°C. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped Mn 3 O 4 thin films in two temperature ranges.

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Influence of Zirconium doping on microstructure and dielectric properties of CaCu 3 Ti 4 O 12 synthesized by the sol–gel method

Cited by 44 publications

References 44 publications

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air

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Influence of Zirconium doping on microstructure and dielectric properties of CaCu 3 Ti 4 O 12 synthesized by the sol–gel method

Cited by 44 publications

References 44 publications

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na1/2Y1/2Cu3Ti4O12 Ceramics

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na1/2Y1/2Cu3Ti4O12 Ceramics

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu3Ti4O12 ceramics

Electric Conduction Mechanisms Study within Zr Doped Mn3O4 Hausmannite Thin Films through an Oxidation Process in Air

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Product

Resources

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Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics

Electric Conduction Mechanisms Study within Zr Doped Mn₃O₄ Hausmannite Thin Films through an Oxidation Process in Air