Influence of γ – radiation on the properties of silicon with clusters impurity atoms of manganese and nickel

Abstract

In works [1-4], it was shown that a number of new physical phenomena are observed in silicon with nanoclusters, such as high-temperature negative magnetoresistance (NMR), anomalously high impurity photoconductivity, giant residual photoconductivity, etc. All these phenomena are directly related to the presence of multiply charged, magnetic clusters of manganese atoms in the silicon lattice. It is shown that, on the basis of such materials, it is possible to create fundamentally new, highly sensitive magnetosensors, photodetectors of infrared radiation operating in the μm region and photomagnetic devices.

Influence of Doping Conditions on the Properties of Nickel Atom Clusters

“…The formation of a cluster leads the system to a more equilibrium state with minimal internal energy [1,10]. Therefore, for the formation of clusters of impurity atoms, the following conditions must be fulfilled:…”

“…3. Under conditions of low-temperature alloying, the formation of silicides and other hard alloys is almost completely absent, since the concentration of impurity atoms will be insufficient for the formation of silicide [1,5].…”