2023
DOI: 10.23851/mjs.v34i2.1223
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Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Abstract: In this investigation, n-type (100) silicon wafers with a thickness of 600 ± 25 μm and resistance of 0.1-100 μΩ were used to manufacture porous silicon. With the aid of hydrofluoric acid (HF) with a 20% concentration, a current density of 20 mA/cm2, and various experimental drilling times of 5, 15, and 25 minutes with the fixation of other parameters, the photoelectrochemical etching method was successful. The morphology of porous silicon was investigated using scanning electron microscopy (SEM), the XRD- diff… Show more

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