Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools

Zhou, Di; Huang, Lei; Yuan, Jun; Li, Chao

doi:10.1016/j.ceramint.2021.08.108

Cited by 10 publications

(2 citation statements)

References 37 publications

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“…The number of Si dangling bonds depends on the content of nitrogen and on the annealing temperature. It was shown that for annealing at 500 • C some of Si-N bonds broke and the resistance of the films began to drop [63]. Figure 5b shows that the samples with the smallest Au amount and the largest Au NP separation (N1) exhibit a similar behavior.…”

Section: Electrical Properties Of the Filmsmentioning

confidence: 91%

Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles

et al. 2022

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The properties of semiconductor materials can be strongly affected by the addition of metallic nanoparticles. Here we investigate the properties of SiC+Au and Si3N4+Au thin films prepared by magnetron sputtering deposition followed by thermal annealing. The influence of gold addition on the optical and electrical properties is explored. We show the formation of self-assembled Au nanoparticles in SiC and Si3N4, with the size and arrangement properties determined by the deposition and annealing conditions. Both SiC- and Si3N4-based films show an increase in the overall absorption with increasing Au content, and its decrease with increasing annealing temperature. All films show the presence of surface plasmon resonance, whose peaks shift toward larger wavelengths with increasing Au nanoparticle size. The resistivity significantly drops with the Au content increase for both types of matrices, although the resistivity of Si3N4-based films is much higher. The incorporated quantity of Au in the host matrix was chosen in such a way to demonstrate that a huge range of optical and electrical characteristics is achievable. The materials are very interesting for application in opto-electronic devices.

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Section: Electrical Properties Of the Filmsmentioning

confidence: 91%

Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles

et al. 2022

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“…Silicon nitride is the most widely used material as dielectric and passivation layer in microelectronics [1] and as structural material in micro-electro-mechanical systems (MEMS), due to its remarkable optical, chemical, and mechanical properties [2,3]. Silicon nitride thin films also play a vital role in optoelectronics applications due to its high refractive index and transparency in the visible and near-infrared (NIR) region [4,5].…”

Section: Introductionmentioning

confidence: 99%

Surface study of RF magnetron sputtered silicon nitride thin films

Majeed¹,

Tariq²,

Wasib³

et al. 2023

JOBM

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Silicon nitride thin films were deposited on the one-sided P-type polished boron-doped silicon wafer substrate via RF magnetron sputtering using stochimetric silicon nitride target at various target-to-substrate distances. Target to substrate spacing, a nonconventional parameter, was varied to optimize the surface roughness and grain size. This optimization provided a normal distribution of homogenous, densely packed silicon nitride thin film free of surface cracks.. Atomic Force Microscopy was employed to explore the accurate surface roughness parameters of Silicon nitride thin films. The surface roughness and grain analysis for all samples exhibited a direct relation to each other and have an inverse correlation with the target to substrate spacing. The surface morphology of Si3N4 was analyzed by the following parameters; average roughness, root-mean square roughness, maximum peak to valley height, ten-point average roughness, skewness, and kurtosis of the line. The surface roughness of silicon nitride films has notable significance in the manufacturing of bio-sensor based on silicon nitride waveguides.

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Alteration and interrogation of ultra-thin layer of silicon by reactive molecular ion implantation

Mukherjee

Bhowmick

Karmakar

et al. 2023

Applied Surface Science

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Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools

Cited by 10 publications

References 37 publications

Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles

Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles

Surface study of RF magnetron sputtered silicon nitride thin films

Alteration and interrogation of ultra-thin layer of silicon by reactive molecular ion implantation

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