Oxygen plasma processing [1] is one method in the important techniques for semiconductor device fabrication. Radio frequency (RF) oxygen plasma is widely used for dry ashing of a photoresist [1, 2] and preparation of an oxide film [3], sterilization of medical products [4,5], etc. On the other hand, inductively coupled plasmas [6,7] and microwave plasmas [8,9] were investigated for these applications using oxygen gas. Recently, one process for producing micro electro mechanical systems devices is also treated by the RF oxygen plasma [10,11]. These processes are mainly attained by the reaction due to oxygen atoms dissociated in the oxygen plasma. For the ashing process, conventional RF capacitive plasmas often suffer from low processing rate. Thus, it is required to realize a higher processing rate to improve the productivity. In order to increase the processing rate, RF hollow-electrode discharge plasmas with various shapes have been proposed [12][13][14][15][16][17].Negative ions, that is, oxygen ions, are also generated in the RF oxygen plasma [18][19][20][21][22][23][24]. The negative ions play important roles in the RF oxygen plasma structure [24]. The presence of the negative ions influences the structure of the plasma