Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD

Zhang, J.J.; Shimizu, Ken D.; Zhao, Ying; Xue, Junming; Geng, Xin; Xiong, Shanxin; Wu, Congcong; Hanna, Jun‐ichi

doi:10.1016/j.jnoncrysol.2005.11.148

Cited by 5 publications

(5 citation statements)

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“…Progress in the research of germanium fluoride compounds could have important contributions in a variety of fields. In fact, one of the well-established procedures for the preparation of Si–Ge thin films includes disilane and germanium tetrafluoride, , thus the basic reactivity of GeF 4 and its properties are worthy of research.…”

Section: Introductionmentioning

confidence: 99%

“…This notion reveals itself in the structures of XeF 5 GeF 5 and ClO 2 GeF 5 , which consist of infinite chains of GeF 6 octahedra. 10 According to evidence provided by vibrational spectroscopy, polymeric GeF 5 − anion composed of fluoride-bridged GeF 6 octahedra appears also in salts with [(C 6 H 5 ) 4 As] + , [(C 3 H 7 ) 4 N] + , [(CH 3 ) 4 N] + , NF 4 + , NO 2 + , SF 3 + , and O 2 + cations. However, these reports lack the crystal structure characterization.…”

Section: ■ Introductionmentioning

confidence: 99%

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Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

et al. 2017

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The recently prepared novel naked fluoride reagent 1,3-bis(2,6-diisopropylphenyl)imidazolium fluoride ([(L)H][F]), treated with an excess of MF (M = Si, Ge), results in isolation of [(L)H][MF] products with the elusive trigonal bipyramidal MF anions. Specific steric characteristics of the [(L)H] cation readily support isolation of monomeric and discrete trigonal bipyramidal fluorido anions of silicon and germanium. Based on combination of experimental results and DFT calculations, we demonstrate that the role of bulky cation is not solely due to steric hindering but also due to electrostatic effects, which are important in the design of such uncommon species. The discrete GeF anion was characterized by X-ray single-crystal diffraction for the first time. We report the missing F NMR entries for the discrete GeF and GeF anions in acetonitrile. All the products were also characterized by Raman spectroscopy and elemental analysis and supported by quantum-mechanical calculations.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

et al. 2017

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“…Carbon tetrafluoride is extremely stable and resistant to hydrolysis and is employed in the semiconductor industry to generate the chemically active F atoms in etching and cleaning processes 1. The tetrafluorides of Si and Ge are less stable than CF 4 2 and are effectively used to deposit thin films of electronic materials by chemical vapor deposition techniques 3–7. The processes are commenced by radiofrequencies or electric discharges, which dissociate the substrates to form the gaseous reactive intermediates that initiate the eventual formation of the solids.…”

Section: Introductionmentioning

confidence: 99%

Gas‐phase chemistry of ionized and protonated GeF₄: a joint experimental and theoretical study

et al. 2011

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The gas-phase ion chemistry of GeF(4) and of its mixtures with water, ammonia and hydrocarbons was investigated by ion trap mass spectrometry (ITMS) and ab initio calculations. Under ITMS conditions, the only fragment detected from ionized GeF(4) is GeF(3)(+). This cation is a strong Lewis acid, able to react with H(2)O, NH(3) and the unsaturated C(2)H(2), C(2)H(4) and C(6)H(6) by addition-HF elimination reactions to form F(2)Ge(XH)(+), FGe(XH)(2)(+), Ge(XH)(3)(+) (X = OH or NH(2)), F(2)GeC(2)H(+), F(2)GeC(2)H(3)(+) and F(2)GeC(6)H(5)(+). The structure, stability and thermochemistry of these products and the mechanistic aspects of the exemplary reactions of GeF(3)(+) with H(2)O, NH(3) and C(6)H(6) were investigated by MP2 and coupled cluster calculations. The experimental proton affinity (PA) and gas basicity (GB) of GeF(4) were estimated as 121.5 ± 6.0 and 117.1 ± 6.0 kcal mol(-1), respectively, and GeF(4)H(+) was theoretically characterized as an ion-dipole complex between GeF(3)(+) and HF. Consistently, it reacts with simple inorganic and organic molecules to form GeF(3)(+)-L complexes (L = H(2)O, NH(3), C(2)H(2), C(2)H(4), C(6)H(6), CO(2), SO(2) and GeF(4)). The theoretical investigation of the stability of these ions with respect to GeF(3)(+) and L disclosed nearly linear correlations between their dissociation enthalpies and free energies and the PA and GB of L. Comparing the behavior of GeF(3)(+) with the previously investigated CF(3)(+) and SiF(3)(+) revealed a periodically reversed order of reactivity CF(3)(+) < GeF(3)(+) < SiF(3)(+). This parallels the order of the Lewis acidities of the three cations.

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“…This is because the incorporation of germanium promotes the formation of crystal grains in the films. [12] As shown in Fig. 5, the surface morphology varies with different GCs, which is relevant to the growth of alloys.…”

Section: Discussionmentioning

confidence: 98%

“…But the growth rates of the films prepared by these methods are always low and plenty of dangling bonds are formed with increasing GC. Zhang et al [12] made a TFT device by using reactive thermal chemical vapour deposition (RTCVD) which exhibited a good promise to solving these problems. However, a high substrate temperature exceeding 400 • C is needed for this technology, which limits the use of many flexible or low cost substrates.…”

Section: Introductionmentioning

confidence: 99%

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

Zhang

Shang

et al. 2008

Chinese Phys. B

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A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition (RTCVD) technology was successfully used to prepare SiGe:H thin films, but the temperature of the substrate needed to exceed 400 • C. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photoconductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.

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Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD

Cited by 5 publications

References 10 publications

Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Gas‐phase chemistry of ionized and protonated GeF₄: a joint experimental and theoretical study

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

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Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD

Cited by 5 publications

References 10 publications

Discrete GeF5– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Discrete GeF5– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Gas‐phase chemistry of ionized and protonated GeF4: a joint experimental and theoretical study

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

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Product

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Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Discrete GeF₅^– Anion Structurally Characterized with a Readily Synthesized Imidazolium Based Naked Fluoride Reagent

Gas‐phase chemistry of ionized and protonated GeF₄: a joint experimental and theoretical study