Influences of Mn doping on the microstructural, semiconducting, and optoelectronic properties of HgO nanostructure films

El-Hagary, M.; Moustafa, S.H.; Hashem, H.M.; Shaaban, E.R.; Emam-Ismail, M.

doi:10.1111/jace.16355

Cited by 22 publications

(4 citation statements)

References 31 publications

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“…High-transparency films are needed for optical devices as the transmittance increases in comparison to In 2 O 3 films as the Gd doping level rises [ 27 , 28 ]. The more oxygen distributed across the coating is what causes the increase in transmittance [ 29 , 30 , 31 ]. The ( T ) trend of the (In 1−x Gd x ) 2 O 3 films in the strongly absorbing area, where the transmittance changes to blue with increasing Gd concentration, is shown in the inset of Figure 11 .…”

Section: Resultsmentioning

confidence: 99%

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

et al. 2023

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After (In1−xGdx)2O3 powder with a wide x range of 0 to 10 at.% was chemically produced, (In1−xGdx)2O3 thin films were evaporated under ultra-vacuum using an electron beam apparatus. We investigated the influence of the Gd doping concentration on the magnetic, optical, electrical, and structural properties of the resultant In2O3 deposits. The produced Gd-doped In2O3 films have a cubic In2O3 structure without a secondary phase, as shown by the X-ray diffraction results. Additionally, the chemical analysis revealed that the films are nearly stoichiometric. A three-layer model reproduced the spectroscopic ellipsometer readings to determine the optical parameters and energy gap. The Egopt changed toward the lower wavelength with growing the Gd doping in (In1−xGdx)2O3 films. The Egopt in the (In1−xGdx)2O3 films was observed to increase from 3.22 to 3.45 eV when the Gd concentration climbed. Both carrier concentration and hall mobility were found during the Hall effect studies. It was possible to construct the heterojunction of Ni (Al)/n-(In1−xGdx)2O3/p-Si/Al. At voltages between −2 and 2 volts, investigations into the dark (cutting-edge-voltage) characteristics of the produced heterojunctions were made. The oxygen vacancies and cationic defects in the lattice caused by the uncompensated cationic charges resulted in significant magnetism and ferromagnetic behavior in the undoped In2O3 films. The (In1−xGdx)2O3 films, however, displayed faint ferromagnetism. The ferromagnetism seen in the (In1−xGdx)2O3 films was caused by oxygen vacancies formed during the vacuum film production process. Metal cations created ferromagnetic exchange interactions by snatching free electrons in oxygen.

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Section: Resultsmentioning

confidence: 99%

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

et al. 2023

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“…The thickness of the film was adjusted at 300 nm at a deposition rate of 2 nm/sec, which was controlled by a thickness monitor device (model; FTM6). More details of the deposition methodology are explained elsewhere [25]. X-ray diffractometer (XRD, Cu-Kα = 1.54056Å, Philips diffraction 1710) was used for crystallographic investigation.…”

Section: Methodsmentioning

confidence: 99%

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

Alzaid

Hadia

El-Hagary

et al. 2021

Preprint

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This paper reports the microstrcure, optical and electrical characteristics of undoped and Cu doped CdTe nanostructured thin films prepared on glass substrates by electron beam evaporation technique. The Crystallographic study of X-ray diffraction shows that CdTe and Cu doped CdTe films crystallize in the form of a cubic zinc blende structure. Microstructure analysis reveals that as the Cu doping level increases, the average crystallite size increases, while the microstrian decreases due to the improvement of the crystallinty, thereby reducing defects. XRD and AFM investigations confirmed the nanostructure characteristic of undoped and Cu doped films. It was found that the optical band gap energy increases from 1.485 eV to 1.683 eV as the Cu concentration increases from 0 wt. % to 10 wt. %, which may be related to the Burstein-Moss effect. The refractive index is calculated from the Swanepoel envelope method and found to decrease with the increase of the Cu doping due to the decrease in the prolizability. Similarly, the extinction coefficient decreases with the increase of Cu in CdTe matrix. The dc electrical conductivity is found to increase with increasing Cu doping, which is attributed to the increase in the grain size, thereby reducing the scattering of the grain boundary. Furthermore, two conduction mechanisms of the carrier transport in nanostrcutured undoped and Cu doped CdTe films were observed. The low temperature dependence of the conductivity of undoped and Cu doped CdTe nanostructured films is explained based on Mott’s variable range hopping conduction mechanism model (VRH). Interestingly, the calculated values of hopping distance R, the hopping energy W and the the density of states at the Fermi level N(EF) are consistent with the Mott's VRH. Finally, Hall effect measurements show that all the films have p- type conduction behavior. Besides, the results show that as Cu doping level increases, the carrier concentration and the Hall mobility increase due to the decrease in grain boundary scattering with the increase in grain size. Accordingly, it can be concluded that by increasing the Cu doping level in the CdTe film, the conductivity is increased, thereby improving the performance of the CdTe absorber layer in the solar cell structure.

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“…The thickness of the film was adjusted at 300 nm at a deposition rate of 2nm/sec, which was controlled by a thickness monitor device (model; FTM6). More details of the deposition methodology are explained elsewhere [26,27,28,29,30,31,32].…”

Section: Methodsmentioning

confidence: 99%

Effect of Cu Incorporation on Optoelectronic Properties of e-Beam Evaporated ZnO thin Films by Ellipsometric Investigations

Ali¹,

Moustafa²,

Amer³

et al. 2021

Preprint

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Electron beam deposition technique has been used to deposit a series of Zn1-xCuxO nanocrystalline thin film on silica substrate with a variety of Cu concentrations. The microstructural, surface morphology and spectroscopic ellipsometry (SE) were used to examine the physical properties of the deposited films. The nanocrystalline nature of the Zn1-xCuxO (0.0≤x≤0.20) thin film has been confirmed by surface morphology studies. The XRD spectrum of the Zn1-xCuxO nanocrystalline film showed a hexagonal wurtzite type structure, and no extra phase was detected. Our results show that as the Cu content increases, the direct optical energy gap Eg decreases without any sign of solubility limit up to x≤0.2. The decrease in Eg can be attributed to the sp-d exchange coupling. In addition, exploring the spectral behavior of the refractive index dispersion from SE of the Cu-doped ZnO shows that as the Cu dopant increments; the refractive index of the deposited film enhances. Further, understand the refractive index dispersion of the deposited film has been performed using a single oscillator model proposed by Wemple-DiDomenico (WDD). Our calculations show that as the Cu concentration increases, the values of oscillator energy Eo decreases however, the dispersion energy Ed increases. As a result, the variation of the optical energy band gap and the tunability of the dispersive oscillator parameters values Eo, Ed, n0, e0, M-1 and M-3 with the increase of the Cu doping level confirm that Cu doped ZnO films are a good candidate for optoelectronic device applications.

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Influences of Mn doping on the microstructural, semiconducting, and optoelectronic properties of HgO nanostructure films

Cited by 22 publications

References 31 publications

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

Structural, Optical, Electric and Magnetic Characteristics of (In1−xGdx)2O3 Films for Optoelectronics

Microstrucral, Optical and Electrical Characteristics of Cu-doped CdTe Nanocrystalline Films for Desinging of Absorber Layer in Solar Cell Applications

Effect of Cu Incorporation on Optoelectronic Properties of e-Beam Evaporated ZnO thin Films by Ellipsometric Investigations

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