Influences of Point and Extended Defects on As Diffusion in Si

Kim, Ryangsu; Hirose, Takahisa; Shano, T.; Tsuji, Hiroshi; Taniguchi, Kenji

doi:10.1143/jjap.41.227

Cited by 14 publications

(7 citation statements)

References 26 publications

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“…Here, a and b are constants, and t denotes annealing time. Equation (19) , and k 311b ¼7:54Â10 13 expðÀ3:51eV=k B TÞ s À1 . For the initial profile of C 311 , a "þ1" model 31 was used, where the implanted Ge profile beneath the a/c interface is multiplied by a factor of 1.0 [see Figs.…”

Section: -2mentioning

confidence: 99%

“…This is probably due to B trapping at EOR defects, 17 which is likely to mask the enhanced B diffusion by tensile strain. Note that dopant trapping (or segregation) has been reported for indium, 18 phosphorus, 15 and arsenic, 19 which diffuse via the interstitial mechanism, and hence, these dopants may be also enhanced at EOR defects but masked by the trapping.…”

Section: Introductionmentioning

confidence: 97%

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Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Isoda

Uematsu

Itoh

2015

Journal of Applied Physics

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Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using nat Si/ 28 Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950 C. The behavior of Si self-interstitials is investigated through the 30 Si selfdiffusion. The experimental 30 Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental 30 Si profiles. V

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Section: -2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Isoda

Uematsu

Itoh

2015

Journal of Applied Physics

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“…This possible role played by interstitials on As diffusion and deactivation was suggested also by some experimental results. [30][31][32][33][34] It is hence evident that the definitive description of mechanisms behind the As deactivation in Si is still uncertain. Moreover, the present and future complementary metaloxide semiconductor technology for the realization of ultrashallow junctions ͑USJ͒ needs dopant distributions confined in the first 20 nm depth with ultimate junction abruptness in order to overcome short-channel effects.…”

Section: Introductionmentioning

confidence: 99%

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

Giubertoni

Pepponi

Gennaro

et al. 2008

Journal of Applied Physics

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The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type ultrashallow junctions in current and future very large scale integrated technology. This is of particular relevance when studying recently developed implantation and annealing methods. Past theoretical as well as experimental investigations have suggested that the increase in As concentration, and therefore the reciprocal proximity of several As atoms, leads to a drastic increase in electrically inactive defects giving only marginal reduction in sheet resistance. Monoclinic SiAs aggregates as well as various arsenic-vacancy clusters contribute to the deactivation of arsenic. This study aims to correlate between the results of electrical activation measurements and x-ray absorption fine structure measurements. Samples were doped with a nominal fluence of 1 ϫ 10 15-3ϫ 10 15 atoms/ cm 2 , implanted at 2 keV, and annealed by rapid thermal treatments, laser submelt treatments, and a combination of both. Hall effect and sheet resistance measurements have been performed to obtain the density of charge carriers. Secondary ion mass spectrometry has been employed to measure the depth profile and the total retained fluences. The percentage of substitutional arsenic has been obtained by least-squares fits of the measured x-ray absorption spectra with simulated spectra of relaxed structures of the defects obtained by density functional theory. A good agreement with the Hall effect measured electrically active dose fraction has been obtained and a quantification of the population of the different defects involved has been attempted.

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“…However, As also exhibits electrical deactivation and transient enhanced diffusion ͑TED͒ during postimplantation thermal annealing. [2][3][4][5][6][7] Earlier experimental and theoretical studies have shown that As TED can be mainly explained by vacancy-mediated As diffusion [5][6][7] and As deactivation might be driven by As n V m complexes. [8][9][10][11] However, Kong et al 4,12 and others have reported that interstitial-mediated As diffusion is dominant for As TED under supersaturated interstitial conditions.…”

Section: Introductionmentioning

confidence: 99%

First-principles studies of small arsenic interstitial complexes in crystalline silicon

Kim

Kirichenko²,

Kong

et al. 2009

Phys. Rev. B

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We present a first-principles study of the structure and dynamics of small As-interstitial complexes ͑AsI 2 , As 2 I 2 , AsI 3 , and As 2 I 3 ͒ in crystalline Si. These complexes can be important components of stable As-interstitial clusters or play a key role in interstitial-mediated formation of As-vacancy clusters. Neutral AsI 2 and As 2 I 2 are identified as fast-diffusing species that contribute to As transient enhanced diffusion. We demonstrate that the extended defect configuration As 2 I 3 ext is a stable configuration with a binding energy of 2.64 eV. As 2 I 3 ext can serve as a nucleation site and facilitate the formation of larger As-interstitial clusters in presence of excess Si interstitials and high As concentration. We also discuss the implications of our findings on As transient enhanced diffusion and clustering and highlight the role of small As-interstitial complexes in ultrashallow junction formation.

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Influences of Point and Extended Defects on As Diffusion in Si

Cited by 14 publications

References 26 publications

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

First-principles studies of small arsenic interstitial complexes in crystalline silicon

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