2023
DOI: 10.1088/1361-6528/acb7fa
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Influences of point defects on electron transport of two-dimensional gep semiconductor device

Abstract: The quantum transport properties of defective two-dimensional (2D) GeP semiconductor nanodevice consisting of typical point defects, such as antisite defect, substitutional defect, and Schottky defect, have been studied by using density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) calculation. The antisite defect has indistinctive influences on electron transport. However, both substitutional and Schottky defect have introduced promising defect state at the Fermi level, indicat… Show more

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Cited by 6 publications
(3 citation statements)
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“…The finite‐difference time‐domain (FDTD) method 1 is a computational electromagnetic numerical technique based on Yee‐grids and Maxwell's equations. It has been extensively used in diverse electromagnetic problems 2–9 . However, modeling intricate geometry and multiscale structures consumes substantial computing time due to the orthogonal continuity of the mesh.…”
Section: Introductionmentioning
confidence: 99%
“…The finite‐difference time‐domain (FDTD) method 1 is a computational electromagnetic numerical technique based on Yee‐grids and Maxwell's equations. It has been extensively used in diverse electromagnetic problems 2–9 . However, modeling intricate geometry and multiscale structures consumes substantial computing time due to the orthogonal continuity of the mesh.…”
Section: Introductionmentioning
confidence: 99%
“…The phase transition from P-3m1 of the hexagonal monolayer structure to the GeX (X = N, P, As, Sb, Bi) of the germanium pnictogen monolayer structure (C2/m) has also been studied. [11][12][13][14] Besides the IV-V family materials, the V-VI monolayer structures have also been discovered very early. Lin predicted the properties of wide-bandgap semiconductor 1T-SN 2 [15] and then obtained excellent optical absorption and photolysis properties by constructing the Janus structure of V-IV-III-VI.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, recent studies show that substitutional doping could improve electrical properties and broaden potential applications of the IV-V monolayers. [12][13][14][15][16] Therefore, it is necessary to explore the effect of TM doping on the structural and magnetic properties of SiP MLs.…”
Section: Introductionmentioning
confidence: 99%