Influences of Si pillar geometry on SiN-stressor induced local strain

Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method

“…By comparing the magnitudes of strain along the x-axis in the FSSM measured by Raman spectroscopy 2) with the present CBED result, it was shown by CBED that the local strain is concentrated at the end of the FSSM. The Raman spectroscopy result indicated a constant strain in the FSSM, but this strain is the average value along the thickness of the FSSM.…”

“…1) As a stress source, Si x N y layers have been used as a strain stressor suitable for threedimensional (3D) microstructures in MOSFET devices. 2) The conventional procedure for introducing strain in Si films is to deposit Si x N y on a Si substrate. 3) In this study, Si x N y is deposited to surround a bridge-shaped freestanding Si membrane (FSSM).…”

Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy

“…To induce strain fields in Si, they were covered with SiN (thickness: 0.2 µm) using low-pressure chemical vapor deposition at 700°C. Finally, they were annealed at 1150°C for 30 min in N 2 to enhance the compressive strain [2]. The polarized Raman measurements (laser spot: ~1 µmφ, wavelength: 532 nm) were performed for the samples under the backscattering configuration.…”

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

“…The conventional procedure for introducing strain in Si films is to deposit a Si x N y layer on a Si substrate by low-pressure chemical vapor deposition (LPCVD) [3], or by plasma-enhanced chemical vapor deposition (PECVD) [4,5]. In this approach, free-standing Si membrane (FSSM) with a bridge-like shape is fabricated by etching, and two kinds of stressors, Si x N y and Si x Ge 1Àx , are deposited on FSSM to fabricate three types of samples.…”