Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Liu, Minggang; Yang, Yibin; Xiang, Peng; Chen, Weijie; Han, Xiumei; Xiu-Qi, Lin; Lin, Jenshan; Hui, Luo; Liao, Qiang; Wen-Jie, Zang; Zhi-Sheng, Wu; Yang, Liting; Zhang, Baijun

doi:10.1088/1674-1056/24/6/068503

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…[9][10][11] One of the primary factors contributing to the decrease in luminescence efficiency is the presence of a piezoelectric polarization field, which was proposed to be induced by stress during epitaxial and doping process on MQWs luminescence. [12,13] Nevertheless, further investigation is required to explore the correlation between microstructure and luminescent properties at the nanoscale for MQWs. Therefore, in order to gain further insights into the luminescence mechanism of MQWs, it becomes imperative to investigate how differences in stress, elemental components and defects among different period QWs influence the luminescent behavior under higher spatial resolution.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Liu 刘,

Liang 梁

et al. 2024

Chinese Phys. B

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To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level, cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In0.15Ga0.85N five-period multiquantum wells. The lattice-composition-energy relationship was established in combination with energy-dispersive X-ray spectroscopy, and the bandgaps of In0.15Ga0.85N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra. The luminescence differences between different periods of multiquantum wells and the effects on the luminescence of multiple quantum wells owing to defects such as composition fluctuation and dislocations were revealed. Our study establishing the direct correspondence between the atomic structure of InxGa1-xN multiquantum wells and photoelectric properties, provides useful information for nitride applications.

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Section: Introductionmentioning

confidence: 99%

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Liu 刘,

Liang 梁

et al. 2024

Chinese Phys. B

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“…In the field of industrial compound semiconductor epitaxial growth, the lattice mismatch between different growth layers with different composite materials can lead to strain or stress, and the release of this strain or stress can cause phase separation [ 17 , 18 ]. In recent years, lattice relaxation has been used to control the precipitation of indium in the GaN/InGaN quantum wells, thereby enabling the emitted light to change from green to a longer wavelength, or even to produce indium-rich clusters of epitaxial wafers [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

Chang

Chen

et al. 2017

Materials

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Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications.

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“…[11] Liu et al have prepared GaN/InGaN multiple quantum wells on Si substrates and investigated the influences of stress on the properties. [12] Nishikawa et al have studied the current-voltage characteristics of InGaN/GaN vertical conducting diodes grown on SiC substrates. [13] In the present work, KT is used as the seed crystal for growing KDP crystal.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous growth of KDP/KT crystal

Wang¹,

Shi²,

Zhang³

et al. 2017

Chinese Phys. B

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The growth of heterogeneous crystal has aroused a great deal of interest in recent years. In this study, KH 2 PO 4 (KDP)/KTaO 3 (KT) heterogeneous crystal is acquired based on the KT substrate. Here, we report the observation of the oriented layer-by-layer structure in KDP/KT composite crystal by scanning electron microscopy (SEM). The structure of KDP/KT composite crystal is accurately identified by transmission electron microscopy (TEM) for the first time and we find that the KT crystals dope into KDP crystal in the growth process with the mode of doping. It can be obtained from the analysis of crystal structure that the structure difference leads to the doping growth mode. Our research demonstrates a facile method to fabricate a composite nonlinear optical crystal based on KDP/KT heterostructure, and might shed light on potential applications of the composite nonlinear optical crystal.

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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Cited by 3 publications

References 29 publications

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

Heterogeneous growth of KDP/KT crystal

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