Influences of synthesizing temperatures on the properties of Cu2ZnSnS4 prepared by sol–gel spin-coated deposition

Yeh, Min Yen; Lee, Chin Cheng

doi:10.1007/s10971-009-1997-z

Cited by 101 publications

(51 citation statements)

References 10 publications

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“…• C. The results are similar to Ref [21]. Figure 4 shows the chemical composition in atomic percent of amorphous CuZnSnS precursor lms annealed at dierent temperatures under Ar ambient.…”

Section: Resultssupporting

confidence: 83%

Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films

Sun

Meng

et al. 2014

Acta Phys. Pol. A

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Amorphous CuZnSnS precursor lms were prepared by solgel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A Cu2ZnSnS4 lm with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200• C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the Cu2ZnSnS4. However, when the precursor lms were annealed with sulfur powder together at temperatures between 360 and 480• C, the CZTS lm containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480• C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.

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“…• C. The results are similar to Ref [21]. Figure 4 shows the chemical composition in atomic percent of amorphous CuZnSnS precursor lms annealed at dierent temperatures under Ar ambient.…”

Section: Resultssupporting

confidence: 83%

Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films

Sun

Meng

et al. 2014

Acta Phys. Pol. A

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“…4,11 Alternatively, the deposition of the precursors can be done under nonvacuum conditions as, for example, through spray pyrolysis, 12,13 the solgel method, 5 or sol-gel spin-coated deposition. 14 The CZTS is formed with a subsequent sulfurization of the precursors. In a different approach, Friedlmeier et al 15 deposited CZTS films using thermal co-evaporation.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

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In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.

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“…No evidence on secondary phase is observed. All the films have exhibited (112) plane orientation which leads to the presence of frequently reported kieserite structure [12][13][14][15]. The superior intensity is achieved by film prepared using PG as a solvent, which suggests the better crystalline is achieved.…”

Section: Introductionmentioning

confidence: 84%

Effect of Type of Solvent on the Sol-Gel Spin Coated CZTS Thin Films

Gohel

2017

PAIJ

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Influences of synthesizing temperatures on the properties of Cu2ZnSnS4 prepared by sol–gel spin-coated deposition

Cited by 101 publications

References 10 publications

Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films

Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Effect of Type of Solvent on the Sol-Gel Spin Coated CZTS Thin Films

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