Influences on Optoelectronic Properties of Damp Heat Stability of AZO and GZO for Thin Film Solar Cells

Yen, W. T.; Ke, Jia; Wang, Hsin Jung; Lin, Yi‐Cheng; Chiang, Jung Lung

doi:10.4028/www.scientific.net/amr.79-82.923

Cited by 6 publications

(3 citation statements)

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“…(Ƹc) and (Ƹa) are calculated according to the following equations (21,22) : The Average particle size of ZnO nanorods fabricated by CBD method is calculated using the Debye Scherer formula. (23) : D = Kλ βcos θ (6) Where k is a constant which is taken to be 0.9, λ is the wavelength of the X-ray (0.154056 nm), β is the full width at half maximum of the peak and the θ is the Braggs diffraction angle. The structural properties of the ZnO nanorods are shown in Table 1, 2 and 3.…”

Section: Resultsmentioning

confidence: 99%

“…It is usually necessary to promote the conductivity and this can be done by doping ZnO with various dopants and by thermal treatment in a reducing atmosphere (3) . To obtain higher conductivity of ZnO materials, the ZnO has been doped with other dopant materials such as ZnO doped with aluminum AZO, Indium IZO and gallium materials GZO (4)(5)(6) . In recent years wide attention has been drawn on inorganic 1D semiconductor nanomaterials (e.g., nanotubes, nanorods, and nanowires) because usually show various significant electronic and photo-electrochemical properties and have a prospective application in photonic and electronic devices (7)(8)(9)(10)(11) .…”

Section: Introducctionmentioning

confidence: 99%

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Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

Ahmed

2018

Innovaciencia

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SCIENTIFIC RESEARCHHow to cite this paper: Ahmed, Sabah, M., Characterization of Aldoped ZnO nanorods grown by chemical bath deposition method, Duhok, Iraq. Innovaciencia. 2018; 6(1): 1-9. http://dx. ABSTRACT Introduction:In recent years a metal oxide semiconductors have been paid attention due to their excellent chemical and physical properties. ZnO (Zinc oxide) is considered as one of the most attractive semiconductor materials for implementation in photo-detectors, gas sensors, photonic crystals, light emitting diodes, photodiodes, and solar cells, due to its novel electrical and optoelectronic properties. There are different uses of metal oxide semiconductors such us, UV photodetectors which are useful in space research's, missile warning systems, high flame detectors, air quality spotting, gas sensors, and precisely calculated radiation for the treatment of UV-irradiated skin. ZnO is a metal oxide semiconductors and it is used as a transparent conducting oxide thin film because it has the best higher thermal stability, best resistance against the damage of hydrogen plasma processing and relatively cheaper if one compares it with ITO. Materials and Methods: On glass substrates, Al-doped ZnO (AZO) nanorods have been grown by a low -cost chemical bath deposition (CBD) method at low temperature. The seed layer of ZnO was coated on glass substrates. The effect of the Al-doping on the aligned, surface morphology, density, distribution, orientation and structure of ZnO nanorods are investigated. The Al-doping ratios are 0%, 0.2%, 0.8% and 2%. The Aluminum Nitrate Nonahydrate (Al (NO3)3.9H2O) was added to the growth solution, which is used as a source of the aluminum dopant element. The morphology and structure of the Al-doped ZnO nanorods are characterized by field emission scanning electron microscopy (FESEM) and high-resolution X-ray diffractometer (XRD). using the radio RF (Radio frequency) magnetron technique. Results and Discussion: The results show that the Al-doping have remarkable effects on the topography parameters such as diameter, distribution, alignment, density and nanostructure shape of the ZnO nanorods. These topography parameters have proportionally effective with increases of the Al-doping ratio. Also, X-ray diffraction results show that the Al-doping ratio has a good playing role on the nanostructure orientation of the ZnO nanorods. Conclusions: The Aluminum Nitride Nanohydrate considered as a good Aluminum source for doping ZnONR. It is clear from FESEM results that the Al-doping of ZnONR has a remarkable effect on the surface topography of nanorods for all aluminum doping ratios. From XRD patterns, it concludes that as the Al-doping ratio increases, the reorientation of the nanostructure of ZnO increases towards [100] direction. The results obtained also have shown that the average diameter of a nanorod is increased with increasing the ratio of Al-doping.

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Section: Resultsmentioning

confidence: 99%

Section: Introducctionmentioning

confidence: 99%

Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

Ahmed

2018

Innovaciencia

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“…Other advantages of ZnO like non-toxic material, high mechanical strength and cheap. Zinc oxide can doped with various materials such as aluminum, gallium and indium to improve specific properties [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

pH sensing characteristics of EGFET based on Pd-doped ZnO thin films synthesized by sol-gel method

Ali

Dhaher

Abdullateef

2015

2015 Third International Conference on Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE)

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This work presents the fabrication and characterization of Palladium-doped Zinc Oxide (Pd-ZnO) thin films for Extended-Gate Field-Effect Transistor (EGFET) pH sensor. The films were fabricated on p-type silicon Si(111) substrates using sol-gel technique. The structure, surface morphology, and electrical properties Pd-ZnO films were studied. The doped ZnO films have uniform, homogenous and free of cracks surfaces. The prepared films were used as pH sensor head to immerse into buffer solutions with different pH. The sensing performance of the fabricated films increased with increasing the doping concentration. The 4% Pd-doped ZnO film based EGFET sensor exhibited voltage sensitivity of 27.86 mV/pH and linearity of 0.97855 in the linear region with pH range from (5-11) which was better than the 2% Pd-doped ZnO based EGFET sensor voltage sensitivity of 24.41 mV/pH and linearity of 0.97746.

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Development of ZnO nanostructure film for pH sensing application

et al. 2020

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Influences on Optoelectronic Properties of Damp Heat Stability of AZO and GZO for Thin Film Solar Cells

Cited by 6 publications

References 7 publications

Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

pH sensing characteristics of EGFET based on Pd-doped ZnO thin films synthesized by sol-gel method

Development of ZnO nanostructure film for pH sensing application

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