Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)

Nakamura, M.; Mochizuki, Yasuhiro; Usami, Katsuhisa; Itoh, Yoshihiro; Nozaki, Tadashi

doi:10.1016/0038-1098(84)90292-8

Cited by 229 publications

(96 citation statements)

References 7 publications

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“…In addition, it was also observed that TO mode of the Si-O-Si slightly shifts towards a higher wave number with increasing sintering temperature and time. Similar behaviors of Si-O-Si band in annealed SiO x (x -contents) sample were noticed by many workers [26][27][28]. They pointed out that the peak position of the asymmetric stretching broad band of the SiO x sample depends on the oxygen contents.…”

Section: Ftirsupporting

confidence: 79%

“…They pointed out that the peak position of the asymmetric stretching broad band of the SiO x sample depends on the oxygen contents. Nakamura et al [26] and Milutinovic et al [27] found that the oxygen contents decreases with increasing annealing temperature and time and as a result the peak position shifts towards higher wave number and eventually the density of SiO x increases. Figure 3 shows morphologies of the sintered composites systems (Nd 2 O 3 -SiO 2 ) as viewed under SEM.…”

Section: Ftirmentioning

confidence: 99%

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Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process

Duhan

Aghamkar

2008

Acta Phys. Pol. A

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Using solgel method Nd2O3−SiO2 binary oxide systems were prepared. The binary oxide transformed from the amorphous phase to nanocrystalline phase upon heat treatment in air. Characterization of the Nd2O3-SiO2 was carried out by using X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electron microscopy. The effect of the sintering temperature and time on the evolution of the binary oxide system was discussed. It is found that sintering time plays a pivotal role to obtain Nd 2 O 3 -SiO2 nanocomposite. At temperature of 900• C, the sample was sintered for 12 h and monoclinic Nd 2 O 3 nanocrystallites, with average crystallite size ≈ 12 nm, were obtained.

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Section: Ftirsupporting

confidence: 79%

Section: Ftirmentioning

confidence: 99%

Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process

Duhan

Aghamkar

2008

Acta Phys. Pol. A

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“…It has been illustrated earlier that surface states rather than impurity doping gave rise to the hole accumulation in Ge-NCs and thereby the E F shift. Consequently, we conjecture that high temperature annealing process might have modified the surface structure of bandwidth are usually attributed to the stoichiometric transition from suboxide (SiO x , 1< x <2) to silicon dioxide [40,41]. In our case, the additional oxygen atoms required for this procedure to occur could be partially supplied from the aforementioned dissociation of Ge-O bonds at the surface of Ge-NCs.…”

Section: / 28mentioning

confidence: 99%

Electrical properties of conductive Ge nanocrystal thin films fabricated by low temperaturein situgrowth

Zhang¹,

Yao²,

Patterson³

et al. 2011

Nanotechnology

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Abstract. Thin films composed of Ge nanocrystals embedded in amorphous SiO 2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced hole accumulation in NCs, and the hole conduction was found to be a thermally activated process involving charge hopping from one NC to its nearest neighbor. Theoretical analysis has shown that the density of surface states in Ge-NCs is sufficient to induce adequate holes for measured conductivity. The film conductivity can be improved significantly by post-growth rapid thermal annealing and this effect is explained by a simple thermodynamic model. The impact of impurities on the conduction properties was also studied. Neither compensation nor enhancement in conduction was observed in the Sb and Ga doped Ge-NCs TFs, respectively. This could be attributed to the fact that these impurities are no longer shallow dopants in NCs and are much less likely to be effectively activated. Finally, the photovoltaic effect of heterojunction diodes employing such Ge-NCs TFs was characterized in order to demonstrate its functionality in device implementation.

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“…[1][2][3] Moreover, the composition and microstructure of nonstoichiometric silicon oxides, nitrides, oxynitrides, and other silicon compounds are frequently measured from the peak frequency, shape, and other features of the infrared bands. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Evaluation of the hydrogen content ͑or other impurities͒ in deposited or grown amorphous layers are routinely determined from the intensity and position of their respective infrared resonances. [20][21][22] Spectral variations are almost always assumed to be due to variations in physical properties of the layers and less frequently in the thicknesses of the layers, angle, and polarization of incident light and multilayer arrangement.…”

Section: Introductionmentioning

confidence: 99%

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

Moreno

Garrido

Samitier

et al. 1997

Journal of Applied Physics

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The peak frequency, width, and shape of the transverse-optical ͑TO͒ and longitudinal-optical ͑LO͒ infrared absorption modes of silicon oxides ͑SiO 2 , SiO x ͒, silicon nitrides ͑Si 3 N 4 , SiN x ͒, silicon oxynitrides ͑SiO x N y ͒, and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure.

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Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)

Cited by 229 publications

References 7 publications

Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process

Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process

Electrical properties of conductive Ge nanocrystal thin films fabricated by low temperaturein situgrowth

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

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Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)

Cited by 229 publications

References 7 publications

Influence of Temperature and Time on Nd2O3-SiO2Composite Prepared by the Solgel Process

Influence of Temperature and Time on Nd2O3-SiO2Composite Prepared by the Solgel Process

Electrical properties of conductive Ge nanocrystal thin films fabricated by low temperaturein situgrowth

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

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Product

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Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process

Influence of Temperature and Time on Nd₂O₃-SiO₂Composite Prepared by the Solgel Process