2019
DOI: 10.1039/c9ra02584g
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Infrared and Raman spectra of Bi2O2X and Bi2OX2 (X = S, Se, and Te) studied from first principles calculations

Abstract: Crystal structures of bismuth oxychalcogenide compounds Bi2O2X and Bi2OX2 (X = S, Se, and Te).

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Cited by 30 publications
(28 citation statements)
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“…Similar structural relaxation was observed earlier also in chemical vapor deposition (CVD) grown Bi 2 O 2 Se nanosheets . Theoretical analysis of Γ point phonon modes of Bi 2 O 2 Se yields four Raman active modes: A 1g and B 1g modes corresponding to the out of plane vibration of Bi and O atoms, respectively, and E g 1 and E g 2 modes corresponding to the in-plane vibration of Bi and O atoms, respectively. Previous studies indicate that out of these four Raman active modes, only the A 1g mode is observable in the backscattering configuration. ,, Figure S5 exhibits the room temperature Raman spectra of the Bi 2 O 2 Se nanosheets in which the A 1g mode is evident around ∼151.9 cm –1 . A comparison between the Raman spectra of bulk and nanosheet Bi 2 O 2 Se samples indicates a low-energy shift of the A 1g mode in the nanosheet (Figure S5) due to phonon softening, corresponding to weakened interlayer coupling in the ultrathin nanosheets …”
supporting
confidence: 69%
“…Similar structural relaxation was observed earlier also in chemical vapor deposition (CVD) grown Bi 2 O 2 Se nanosheets . Theoretical analysis of Γ point phonon modes of Bi 2 O 2 Se yields four Raman active modes: A 1g and B 1g modes corresponding to the out of plane vibration of Bi and O atoms, respectively, and E g 1 and E g 2 modes corresponding to the in-plane vibration of Bi and O atoms, respectively. Previous studies indicate that out of these four Raman active modes, only the A 1g mode is observable in the backscattering configuration. ,, Figure S5 exhibits the room temperature Raman spectra of the Bi 2 O 2 Se nanosheets in which the A 1g mode is evident around ∼151.9 cm –1 . A comparison between the Raman spectra of bulk and nanosheet Bi 2 O 2 Se samples indicates a low-energy shift of the A 1g mode in the nanosheet (Figure S5) due to phonon softening, corresponding to weakened interlayer coupling in the ultrathin nanosheets …”
supporting
confidence: 69%
“…In order to further verify the pressure-induced formation of Bi–S bonding experimentally, we collected in situ Raman spectra during compression and decompression (Figures S9 and S10 and detailed discussion in the Supporting Information). All Raman-active vibrations come from the Bi–O layers, without contributions from S atoms. , Under high pressures, a new Raman peak appears at around 225 cm –1 at 11.8 GPa, which comes from the vibrations of the Bi–S bonding . This finding further confirms the formation of Bi–S bonding and the disappearance of LPEs.…”
supporting
confidence: 58%
“…The band centered at 123 cm −1 could be from the A 1 g mode of the Bi 2 OTe 2 semiconductor. [ 52–55 ] Since the SNAB host glass matrix is composed of a considerable amount of oxygen, it is possible that during the annealing process some O 2− bound itself to the Bi 3+ /Te 2− ions, thereby forming Bi 2 OTe 2 .…”
Section: Resultsmentioning
confidence: 99%