Infrared and Raman spectra of the IV-VI compounds SnS and SnSe

Chandrasekhar, H. R.; Humphreys, R.G.; Zwick, Uri; Cardona, M.

doi:10.1103/physrevb.15.2177

Cited by 510 publications

(333 citation statements)

References 23 publications

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“…In addition, Raman spectroscopy of all of the SnS films (Fig. 3b) revealed Raman bands at 94, 160, 188, and 218 cm -1 , in good agreement with the herzenbergite SnS phase reported previously [38][39][40].…”

Section: Resultssupporting

confidence: 63%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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Tin(II)O-ethylxanthate [Sn(S 2 COEt) 2 ] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn 1.3 S and SnS) were reliably produced by selecting heating temperatures between 200 and 400°C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S 2 COEt) 2 ] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV-Vis spectroscopy.

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Section: Resultssupporting

confidence: 63%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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“…They have been collected with a LabRam HR800 microprobe setup (in backscattering geometry) (Horiba Jobin-Yvon, Kyoto, Japan) by using an exciting radiation at 632.8 nm (He-Ne laser). The peak positions are in good agreement with those of SnS single crystal [55], and the absence of any signal in the region just above 300 cm −1 indicates that the layers have no secondary phases. No signals near the wavelength of 310 cm −1 are detected, showing that the SnS thin films do not have secondary phases like Sn 2 S 3 (main mode at 307 cm −1 ) and SnS 2 (312 cm −1 ) [55].…”

Section: Substrate Temperaturesupporting

confidence: 75%

“…The main change between the two spectra is a different relative intensity of the vibrational modes at 164 cm −1 and at 221 cm −1 . The most intense peak is at 193 cm −1 , which belongs to a symmetric stretching of the Sn-S bond [55] and shows a small shift as the substrate temperature is changed.…”

Section: Substrate Temperaturementioning

confidence: 99%

SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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Abstract:Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe 2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs). The sulfur loss represents one of the major challenges of SnS solar cell technology.

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“…The spectra shown in Figure 7 refer to results using a laser excitation wavelength of 532 nm and the inset shows the spectra obtained for the lowest and highest selenization temperatures with a laser excitation wavelength of 325 nm. 48 . Due to the presence of the minor peaks located at 185 cm −1 , these results suggest the presence of a residual amount of SnSe 2 .…”

Section: Structural Studymentioning

confidence: 99%

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

et al. 2013

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In this work, tin selenide thin films (SnSe x ) were grown on soda lime glass substrates by selenization of dc magnetron sputtered Sn metallic precursors. Selenization was performed at maximum temperatures in the range of 300 • C to 570 • C. The thickness and the composition of the films were analysed using step profilometry and energy dispersive spectroscopy, respectively. The films were structurally and optically investigated by X-Ray diffraction, Raman spectroscopy and optical transmittance and reflectance measurements. X-Ray diffraction patterns suggest that for temperatures between 300 • C and 470 • C the films are composed of hexagonal-SnSe 2 phase. By increasing the temperature, the films selenized at maximum temperatures of 530 • C and 570 • C show orthorhombic-SnSe as the dominant phase with a preferential crystal orientation along the (400) crystallographic plane. Raman scattering analysis allowed the assignment of peaks at 119 cm −1 and 185 cm −1 to the hexagonal-SnSe 2 and 108 cm −1 , 130 cm −1 and 150 cm −1 to the orthorhombic-SnSe phase. All samples present traces of condensed amorphous Se with a characteristic Raman peak located at 255 cm −1 . From optical measurements, the estimated band gap energies for hexagonal-SnSe 2 were close to 0.9 eV and 1.7 eV for indirect forbidden and direct transitions, respectively. The samples with the dominant orthorhombicSnSe phase presented estimated band gap energies of 0.95 eV and 1.15 eV for indirect allowed and direct allowed transitions, respectively.

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Infrared and Raman spectra of the IV-VI compounds SnS and SnSe

Cited by 510 publications

References 23 publications

A facile method for the production of SnS thin films from melt reactions

A facile method for the production of SnS thin films from melt reactions

SnS Thin Film Solar Cells: Perspectives and Limitations

Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors

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