Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1−<i>x</i>Eu<i>x</i>Se

Tacke, M.; Spanger, B.; Lambrecht, A.; Norton, P. R.; Böttner, H.

doi:10.1063/1.100247

Cited by 62 publications

(9 citation statements)

References 6 publications

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“…It is a common property of the magnetic elements Eu and Mn that they provide a large tunability of the energy gaps even for low concentrations in PbTe, which has been used in midinfrared laser applications. [3][4][5][6] Pb 1Ϫx Eu x Te has been investigated by magnetooptics only in the low concentration range (xϽ0.06). 7 The analysis of magnetization [8][9][10] (xр0.32) and of magnetization steps 11 (xр0.06) in high-magnetic fields has given information about the distribution of Eu atoms and their mutual magnetic exchange interaction.…”

Section: Introductionmentioning

confidence: 99%

Interband Faraday and Kerr rotation and magnetization ofPb1−xEuxTein the con

et al. 1999

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Faraday and magneto-optical Kerr effect has been used for the investigation of the band alignment as well as of the magnetic properties of epitaxial layers of the ternary alloy system Pb 1Ϫx Eu x Te (0рxр1) grown on BaF 2 substrates. Due to the wide range of transition energies (0.19 eVрE g р2.25 eV) the experiments had to be performed in the spectral range from midinfrared to visible light. Data were collected at temperatures between 1.8 and 250 K and in magnetic fields up to 7 T. Concomitant magnetization measurements (B ϭ1 T) were performed with a superconducting quantum interference device ͑SQUID͒ magnetometer and compared with measurements of the x dependence of the Verdet constant. The variation of the fundamental absorption gap with Eu content can be understood in terms of the relative energetic position of PbTe-related band edges and Eu 4 f and 5d levels: ⌬E g /⌬xϭ4.48 eV for xϽ0.06; ⌬E g /⌬xϭ2.03 eV for 0.06ϽxϽ0.6. For xϾ0.8, the electronic transitions are identified to be EuTe-like. The most striking feature is a sign reversal of Verdet's constant around xϭ0.15, which is attributed to a crossover of Faraday rotation caused by band electrons ͑holes͒ and interacting pairs of magnetic ions and a metal-insulator transition. An antiferromagnetic phase transition is observed for xϾ0.8 in magneto-optics as well as in SQUID magnetometry.

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Section: Introductionmentioning

confidence: 99%

Interband Faraday and Kerr rotation and magnetization ofPb1−xEuxTein the con

et al. 1999

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“…11 Nevertheless, efficient above room temperature photoluminescence has been reported for both material systems 19,20 and operation temperatures as high as 250 K have been achieved for PbSe/PbEuSe QW lasers. 21,22 To resolve this issue, in this letter, we employ temperature modulated differential transmission spectroscopy to determine the band alignments of PbSe=Pb 1Àx Eu x Se multiquantum wells (MQWs). From comparison with detailed envelope function calculations, we demonstrate a type I band alignment with a relative conduction band offset of DE c =DE g ¼ 0:45 6 0:15, independently of temperature and europium content up to x Eu ¼ 14%.…”

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confidence: 99%

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Simma

Bauer

Springholz

2012

Applied Physics Letters

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The band offsets of PbSe/Pb1−xEuxSe multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k·p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45±0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

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“…MBE of IVVIs is already in routine use [7], interdiffusion is less severe, no difficult handling of Hg is needed, and the dependence of the band gap on composition is much less pronounced in IV-VIs. Much higher compositional uniformities are achievable.…”

Section: Introductionmentioning

confidence: 99%

<title>Monolithic IR sensor arrays in heteroepitaxial narrow-gap lead chalcogenides on Si for the SWIR, MWIR, and LWIR range</title>

et al. 1990

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We describe heteroepitaxy of narrow gap semiconductor (NGS) layers on Si-substrates, and fabrication of photovoltaic JR-sensor arrays in the NGS layers. We rather use lead chalcogenides (PbS, PbTe, Pb1EuSe and Pb1SnSe) than Hg1CdTe (MCT) as NGS material for sensor integration because maximum sensitivities are comparable in both families, while growth and fabrication techniques are much easier and compositional homogeneity much less critical with lead salts. The high permittivity of lead salts yields to much more fault tolerant devices due to the effective shielding ofcharges resulting from defects. The somewhat slower response time of lead salts is of no importance for photovoltaic JR-focal plane arrays for thermal imaging applications. Epitaxy of the NGS layers is achieved by using stacked intermediate CaF2-BaF2 bilayers to overcome the large lattice-and thermal expansion mismatch. We have now fabricated linear sensor arrays on Si-substrates with cutoff wavelengths ranging from 3 j.tm (with PbS and Pb1EuSe) and 5.5 j.m (PbTe) up to >12 p.m (Pb1Sn1Se). The sensitivities of our best PbTe on Si sensors are already as high as those of MCT with comparable cut-off wavelengths, while those of our first Pb1SnSe devices are a factor 2-5 below. This despite many of our fabrication steps are rather crude and far from being optimized, and considerable improvement is still possible.

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Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe

Cited by 62 publications

References 6 publications

Interband Faraday and Kerr rotation and magnetization ofPb1−xEuxTein the con

Interband Faraday and Kerr rotation and magnetization ofPb1−xEuxTein the con

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

<title>Monolithic IR sensor arrays in heteroepitaxial narrow-gap lead chalcogenides on Si for the SWIR, MWIR, and LWIR range</title>

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