Carrier density dependence of the detection abilities of an antenna‐coupled point‐contact Ge diode at 118 μm and 10.6 μm was studied. The optimum carrier densities obtained by experiments were 1016 cm−3 and 2 × 1017 cm−3 for CH3OH and CO2 lasers, respectively.
These results were explained by calculation based on the assumption that the conductivity of the metal is in the relaxation region and that the spreading resistance of the semiconductor is affected by the skin effect, carrier inertia and displacement current.