Infrared lattice reflection spectra of III–V compound semiconductors

Hass, M.; Henvis, B. W.

doi:10.1016/0022-3697(62)90127-0

Cited by 378 publications

(45 citation statements)

References 30 publications

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“…This gives e* = 0.16le, which is in excellent agreement with the effective charge obtained from optical reflectivity, e* = 0.16e [17]. I n Fig.…”

Section: Polar Mobility In N-insbsupporting

confidence: 77%

Inelastic Scattering of Electrons by Optic Phonons in InSb‐Type Semiconductors

Pfeffer¹,

Zawadzki²

1978

Physica Status Solidi (b)

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Inelastic scattering of electrons by optic phonons in 111-V semiconducting compounds of InSb type is described, taking into account consistently nonparabolic band structure of these materials both in the ~( k ) dependence and the electron wavefunctions. The calculations are based on the Kane band model, including explicitly admixture of p-like components and spin mixing in the conduction band. A variational procedure is used to derive explicit expressions for electric conductivity in case of optic phonon scattering. It is indicated how to generalize the procedure for an arbitrary spherical energy band. Numerical values of electron mobility in n-InSb at various temperatures and electron concentrations are presented and compared with mobilities calculated in the relaxation time approximation, thus examining the validity of the latter. It is demonstrated that even a t room temperature the nonelastic character of electron-phonon collisions has a pronounced effect on the conductivity.Es wird die inelastische Streuung von Elektronen durch optische Phononen in 111-V-Verbindungshalbleitern vom InSb-Typ beschrieben, wobei die nichtparabolische Bandstruktur dieser Materialien sowohl in der e(k)-Abhiingigkeit als auch in den Elektronenwellenfunktionen konsistent beriicksichtigt werden. Die Rechnungen basieren auf dem Bandmodell von Kane und schlieDen Zumischung von p-iihnlichen Komponenten und Spin-Zumischung in das Leitungsband explizit ein. Ein Variationsverfahren wird benutzt, um explizite Ausdriicke fur die elektrische h i tfahigkeit im Falle von Streuung an optischen Phononen abzuleiten. Es wird gezeigt, wie das Verfahren fur ein beliebiges sphiirisches Energieband verallgemeinert werden muD. Numerische Werte der Elektronenbeweglichkeit in n-InSb bei verschiedenen Temperaturen und Elektronenkonzentrationen werden angegeben und mit Beweglichkeiten verglichen, die in der Relaxationszeitniiherung berechnet wurden, um so die Giiltigkeit der letzteren zu untersuchen. Es wird gefunden, daD sogar bei Zimmerbmperatur der nichtelastische Charakter der Elektron-PhononStoDe einen ausgepriigten EinfluD auf die Leitfiihigkeit besitzt.

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“…This gives e* = 0.16le, which is in excellent agreement with the effective charge obtained from optical reflectivity, e* = 0.16e [17]. I n Fig.…”

Section: Polar Mobility In N-insbsupporting

confidence: 77%

Inelastic Scattering of Electrons by Optic Phonons in InSb‐Type Semiconductors

Pfeffer¹,

Zawadzki²

1978

Physica Status Solidi (b)

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“…4. We employ the value of the static dielectric constant ε 0 = 15.15, 46 and our background slab is as thick as 600 nanometers. Before examining subbands in the surface accumulation layer, we mention the energy dispersion of the conduction band in the bulk.…”

Section: Resultsmentioning

confidence: 99%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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Adsorption on an n-type InAs surface often induces a gradual formation of a carrieraccumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP) dispersion of the conduction band into the local-density-functional (LDF) formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process.

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“…El método que introdujeron Hass y Henvis [8] para determinar las constantes ópticas de la reflectividad medida en aleaciones III-N, usando un modelo de oscilador elástico de dispersión simple es aplicado en este caso. Consiste en utilizar las ecuaciones que relacionan la reflectividad (R) de la radiación que incide en una capa de un material absorbente con el índice de refracción complejo.…”

Section: Resultados Experimentales Y Discusiónunclassified