Infrared Lattice Vibrations and Free-Electron Dispersion in GaN

Infrared activity in the Aurivillius layered ferroelectricSrBi2Ta2OMoret1, Zallen2, Newnham3 et al. 1998Phys. Rev. B606290View full textAdd to dashboardCite

“…With unpolarized incident light and the c axis normal to the surface ͑our experimental geometry͒, it is known that off-normal incidence will produce a shallow dip in an EЌc high-reflectivity plateau at the position of an E ʈ c LO mode. 24,25 Support for this interpretation of the weak 675 cm Ϫ1 feature in the crystal reflectivity is provided by the well-defined 675 cm Ϫ1 reflectivity edge seen in the polycrystalline pellet ͑top panel of Fig. 2͒.…”

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

“…20. With N d ϭ2ϫ10 17 cm Ϫ3 , dϭ200 nm, V bi ϭ1 V for the Pt gate contact, and taking ⑀Х9.5 for GaN, [17][18][19] we find that N 1T and N 2T are comparable: N 1T Х4ϫ10 11 cm Ϫ2 , N 2T Х6ϫ10 11 cm Ϫ2 , and consequently the total areal trap density is N T Х1ϫ10 12 cm Ϫ2 . It is now clear that the large difference in the observed magnitudes of S(hv) for the two traps ͑Fig.…”

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…2006 [79] /1975 [80] TBD /1981 [82] ≈ 0.94/TBD 2008 [81] /-(7) Relative permittivity 10.4 for E//c axis; 9.5 for E ┴ c axis [83,84] Interpolation 9.76, E//c axis [85] (corrected for fringing fields); NR ┴ c axis -10 [86] 7.1 [87] 5.7 [58] Depends on insulator…”