Infrared Nonlinear Optical Performances of (Ga2Ge)100-x(Ga3Sb2)x (x = 15, 30, 45, 60) Thin Films

Raj, Rajnish; Lohia, Pooja; Dwivedi, D. K.

doi:10.5185/amlett.2021.091662

Cited by 2 publications

(1 citation statement)

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“…Moreover, the absorption coefficient helps to provide information about the direct and indirect electronic transitions in the material. The transition corresponds to the direct transition for α > 10 4 cm –1 while it corresponds to the indirect transition for α < 10 4 cm –1 . − The value of the absorption coefficient can be calculated by utilizing the following equation: α = 1 d ln ( 1 T ) where d stands for the thickness of the material (about 637 nm for the studied InSe film). Figure demonstrates the variation of α with wavelength (λ).…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Interfacial InSe Thin Film

Emir,

Tataroglu,

Coşkun

et al. 2024

ACS Omega

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This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV–vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV–vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (E g), refractive index (n), absorption coefficient (α), and optical conductivity (σopt). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.

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