Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

D'Costa, V. R.; Subramanian, Sharath; Li, Daosheng; Wicaksono, Satrio; Yoon, Soon Fatt; Tok, Eng Soon; Yeo, Yee-Chia

doi:10.1063/1.4882917

Cited by 4 publications

(3 citation statements)

References 22 publications

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“…The process showed an interesting application of Raman and may prove promising as a method to probe dopant incorporation within shallow junctions formed using the MLD technique. D'Costa and coworkers utilised infrared spectroscopic ellipsometry to study S-MLD doped InGaAs USJs [54]. The samples were prepared using the previously mentioned (NH 4 ) 2 s cleaning method.…”

Section: Mld On Ingaasmentioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

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Section: Mld On Ingaasmentioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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“…q is $50% higher compared to bulk Ge resistivity 25 for 1.4 Â 10 19 cm À3 which could be attributed to the incomplete recovery of the Ge crystal. The thinner implanted layer may also contribute to higher q and lower s or lower l. 28 As-implanted GeSn gave higher q ¼ 11 6 1 mX-cm and lower s ¼ 8 6 2 fs (N $ 5 Â 10 18 cm À3 and l $ 117 cm 2 V À1 s À1 ) compared to Ge. It should be pointed out that q and s for GeSn heated implants match with those for the as-grown in situ doped n-type GeSn.…”

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confidence: 99%

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

D'Costa

Wang

et al. 2014

Applied Physics Letters

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We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transport properties similar to those of heated Ge implants. The far-infrared dielectric function of as-implanted Ge and GeSn shows the typical free carrier response which can be described by a single Drude oscillator. Bulk Ge-like critical points E1, E1 + Δ1, E0', and E2 are observed in the visible-UV dielectric function of heated Ge and GeSn indicating single crystalline quality of the as-implanted layers. Although the implantation at 400 °C recovers crystallinity in both Ge and GeSn, an annealing step is necessary to enhance the carrier activation.

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“…There have been reports of direct bonding to oxide-free III–V surfaces using organic thiols, − and due to the simplicity of the procedure and availability of suitable commercial molecules, as well as the excellent oxidation resistance offered by III–V-thiol chemistry, this was one of the functionalization approaches used in this study. Solution-phase S doping of InGaAs has been relatively widely reported due to the simplicity of the procedure. − Ammonium sulfide is often used to remove the native oxides on InGaAs, but the process conveniently results in a S-terminated surface, allowing diffusion of S as a monolayer into the InGaAs surface via a rapid thermal anneal step. Although not a traditional MLD process, due to the gas-phase nature of the dopant precursor and high-vacuum requirements of the deposition process, Kong and co-workers recently reported the Si MLD of InGaAs nanostructures by means of a MOCVD-deposited silane layer with a thickness of a few monolayers .…”

Section: Introductionmentioning

confidence: 99%

Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers

et al. 2017

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The functionalization and subsequent monolayer doping of In GaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the Asdominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components

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Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Cited by 4 publications

References 22 publications

Chemical approaches for doping nanodevice architectures

Chemical approaches for doping nanodevice architectures

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers

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