Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenated n-type GaAs doped with silicon

Abstract

Infrared absorption spectroscopy has been performed on hydrogenated and deuterated n-type silicon-doped GaAs. It reveals the presence of a sharp vibrational mode at 890 cm−1 in hydrogenated samples and at 637 cm−1 in deuterated ones. These bands are absent in undoped GaAs. Analysis of the isotopic shift frequency reveals that the band is associated with a hydrogen–arsenic bond where arsenic is supposed to sit as a first nearest neighbor of the silicon donor atom giving rise to (SiAs3)As-H complexes. Isochronal annealing experiments show the direct correlation between the absorption line intensity and the amount of neutralized donors, confirming the view that the extra electrons of the silicon donors are involved in the hydrogen–arsenic bonds.

Hydrogen-impurity complexes in III–V semiconductors

“…The Si Ga -H complex in GaAs was the first of this type of complexes thoroughly investigated using vibrational spectroscopy [99,100]. On plasma-passivated MOCVD-grown GaAs samples doped with Si Ga (≈3×10 18 cm −3 ), a pair of vibrational absorption lines were measured after hydrogen as well as deuterium passivation.…”

Reliability and Radiation Hardness of Compound Semiconductors

“…Experiments have shown that exposure of Si-doped GaAs to RF hydrogen plasma results in neutralization of the Si donors. Infrared spectroscopy data have also given evidence of (SiAs 3 )As-H complexes [23].…”

Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers

“…The experimental proof of Si-H complexes has been obtained from infrared local vibrational mode absorption (LVM) spectroscopic measurements [5]. Previous hydrogenation studies on indium-doped CZT have also confirmed the formation of donor impurity indium making complexes with atomic hydrogen [6].…”