Infrared spectroscopy of methyl groups on silicon

Kong, Maynard; Lee, Szetsen S.; Lyubovitsky, Julia G.; Bent, Stacey F.

doi:10.1016/s0009-2614(96)01186-4

Cited by 48 publications

(53 citation statements)

References 21 publications

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“…3.42 [365]. It should be noted that the deposition process likely competes with alane desorption as was shown for diethylaluminum hydride on Si(100)-2×1 [366], although methyl groups on Si(100)-2×1 are likely much more stable than ethyl [99,100,103].…”

Section: Effect Of Metal Atoms On the Pathways Of Chemical Reactions mentioning

confidence: 92%

Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

Leftwich

Teplyakov

2007

Surface Science Reports

123

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Section: Effect Of Metal Atoms On the Pathways Of Chemical Reactions mentioning

confidence: 92%

Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

Leftwich

Teplyakov

2007

Surface Science Reports

123

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“…This is in line with self-saturation through steric hindrance. We note, however, that C-H stretch intensities for CH 3 on Si surfaces are nonlinear functions of the methyl coverage [14] and are therefore not directly translatable into areal densities.…”

Section: Illustrative Resultsmentioning

confidence: 84%

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002

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There is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO 2 /Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al 2 O 3 films are compatible in structure to films grown in a commercial ALD reactor.

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“…4, a-e) exhibit vibrational modes that have in prior work of the DS catalyst been assigned to surface CH 3 groups and/or CH x=1,2 fragments [3]. Based on prior studies of surface CH 3 on silicon we assign the modes associated with the Zn-Sn-, Zn-P-, Sn-P-promoted, and unpromoted contact masses at 3,000-2,969 and 2,954-2,927 cm -1 to the m as (CH 3 ) and m s (CH 3 ) modes of surface CH 3 on Si, respectively, [3,19,20]. Modes observed at lower wavenumbers than these modes are assigned to decomposition fragments of CH 3 ; i.e., CH x=1,2 (see Table 1) [3,19].…”

Section: In Situ Identification Of Surface Intermediates On the Ds Comentioning

confidence: 99%

Effects of Multiple Promotion of the Direct Synthesis Contact Mass with P, Zn, and Sn on the Synthesis of Methylchlorosilanes

2009

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The Direct Synthesis, or Rochow Synthesis, involves the reaction of methyl chloride, CH 3 Cl (MeCl), with Cu-Si contact masses (promoted with 1-2% of Zn, Sn, and P) to form methylchlorosilanes. Flow reactor studies (1 bar MeCl at 300°C) showed that contact masses promoted with Zn, Sn, and P (triply promoted) demonstrated the highest Si and MeCl conversion at early reaction times. In situ infrared spectroscopy suggested that in contrast to the doubly promoted catalysts (where CH 3 groups were primarily bound to Si), surface CH 3 showed appreciable binding to the copper component of the triply promoted contact mass. This change in surface composition ultimately led to a drop in reactivity and selectivity of the triply promoted catalyst.

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Infrared spectroscopy of methyl groups on silicon

Cited by 48 publications

References 21 publications

Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

In Situ Spectroscopic Approach to Atomic Layer Deposition

Effects of Multiple Promotion of the Direct Synthesis Contact Mass with P, Zn, and Sn on the Synthesis of Methylchlorosilanes

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