Infrared SPR sensing with III-nitride dielectric layers

Abstract

In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si (111)

Low‐to‐Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio‐Frequency Sputtering

“…Our group already has experience on the deposition of In-rich Al x In 1Àx N (x ¼ 0À0.39) on glass, [9] sapphire, [10] and directly on Si(111) [11] substrates, and also with an AlN buffer layer [12] at different temperatures ranging from room temperature [9] to 550 ºC. [10,11] We have achieved high-structural-quality nitride layers on sapphire with a bandgap energy of 1.76À2.03 eV (704À610 nm) and a roomtemperature photoluminescence (PL) emission that blueshifts from 1.59 eV (779 nm) to 1.86 eV (666 nm) for InN and Al 0.36 In 0.64 N, respectively.…”

Development of AlInN photoconductors deposited by sputtering

“…It presents high radiation hardness, and high thermal and chemical stability. These properties make it interesting for applications in light‐emitting devices, solar cells, and opto/chemical sensing . This material can be synthesized by different methods, such as molecular beam epitaxy (MBE) , metalorganic chemical vapour deposition (MOCVD) , or radio‐frequency (RF) reactive sputtering .…”