Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Liu, Huapeng; Sheng, Bowen; Wang, Tao; Kudryavtsev, K. E.; Yablonskiy, A. N.; Wei, Jiaqi; Imran, Ali; Chen, Zhaoying; Wang, Ping; Zheng, Xiantong; Tao, Renchun; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo; Andreev, B. A.; Wang, Xinqiang

doi:10.1016/j.fmre.2021.09.020

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…Then, Ga atoms also start to be expelled. This is understood by the larger Ga–N bond strength than the In–N bond strength. − Consequently, some In incorporation is still expected at P6 and P7 in the white, more compact, columnar region, but pure GaN is present at P8 and P9 in the gray, compact, more planar region. This will be confirmed by the XRD and PL measurements.…”

Section: Resultsmentioning

confidence: 99%

Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption

Deng,

Pan,

Hong

et al. 2023

Crystal Growth & Design

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The growth of InGaN on Si in the regime slightly above the onset of In desorption naturally leads to the formation of core−shell InGaN nanowires (NWs) by plasma-assisted molecular beam epitaxy. The onset of In desorption is gradual and depends on the growth temperature, N flux, and metal fluxes. The dependence on the growth temperature has been reported before; here, the dependence on the N flux or N/metal flux ratio is the topic. Based on the analysis of InGaN layers directly grown on Si (111) substrates without substrate rotation, we present a detailed correlation of the morphological, structural, and optical properties close to the transition from metal-rich to N-rich growth conditions due to changing N flux across the wafer with very high precision. The different regions are characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, X-ray diffraction, and photoluminescence spectroscopy. In desorption for the In-poor InGaN NW shell formation is reduced by increasing N flux, while the In-rich core is generally much less affected by In desorption with a stable, high In content, confirming the previous growth model. Good optical quality requires a N flux a few percent higher than the metal flux, highlighting the importance of the transition from metal-rich to N-rich growth as a crucial reference for realizing high-quality core−shell InGaN NWs.

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Section: Resultsmentioning

confidence: 99%

Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption

Deng,

Pan,

Hong

et al. 2023

Crystal Growth & Design

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Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Kudryavtsev,

Andreev,

Lobanov

et al. 2023

Journal of Applied Physics

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Interband recombination in bulk indium-rich InGaN is studied via both spontaneous and stimulated emissions. Based on the low-temperature luminescence and absorption data, the magnitude of the edge tails in conduction and valence bands is determined, and the non-thermal energy distribution of excess holes localized in the fluctuating band potential is revealed. We show that the combination of carrier localization effects and Auger-determined interband rates fully accounts for the experimentally observed stimulated emission thresholds and gain values (∼20–30 kW/cm2 and >100 cm−1, respectively) at low temperatures (T < 100 K). It is suggested that exploiting structural disorder to keep injected holes below the mobility edge, thus suppressing defect-related recombination, is a prerequisite for high-temperature infrared lasing from degenerate InGaN with relatively temperature-stable threshold intensities of some 100 kW/cm2.

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Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates

Nie,

Hu,

et al. 2024

Materials

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Narrow-gap InN is a desirable candidate for near-infrared (NIR) optical communication applications. However, the absence of lattice-matched substrates impedes the fabrication of high-quality InN. In this paper, we employed Molecular Beam Epitaxy (MBE) to grow nanostructured InN with distinct growth mechanisms. Morphological and quality analysis showed that the liquid phase epitaxial (LPE) growth of hexagonal InN nanopillar could be realized by depositing molten In layer on large lattice-mismatched sapphire substrate; nevertheless, InN nanonetworks were formed on nitrided sapphire and GaN substrates through the vapor-solid process under the same conditions. The supersaturated precipitation of InN grains from the molten In layer effectively reduced the defects caused by lattice mismatch and suppressed the introduction of non-stoichiometric metal In in the epitaxial InN. Photoluminescence and electrical characterizations demonstrated that high-carrier concentration InN prepared by vapor-solid mechanism showed much stronger band-filling effect at room temperature, which significantly shifted its PL peak to higher energy. LPE InN displayed the strongest PL intensity and the smallest wavelength shift with increasing temperature from 10 K to 300 K. These results showed enhanced optical properties of InN nanostructures prepared on large lattice mismatch substrates, which will play a crucial role in near-infrared optoelectronic devices.

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Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Cited by 3 publications

References 34 publications

Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption

Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates

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