2016
DOI: 10.1149/ma2016-02/28/1875
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Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon

Abstract: Tin oxide (SnO2) is an oxide semiconductor material with an excellent optical transparency, where it is used as transparent conducting films. It is also used as a channel material for gas sensors. Recently atomic layer deposition (ALD) of SnO2 has been studied intensively since ALD allows the conformal deposition of the oxide film with an atomic level precision. However, the high process temperature in excess of 100 °C in the conventional SnO2 ALD is a major problem for its application for flexible electronics… Show more

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