We present a high-pressure investigation of the semiconductor-to-metal
transition in MoS2 and WS2 carried out by synchrotron-based
far-infrared spectroscopy, to reconcile the controversial estimates
of the metallization pressure found in the literature and gain new
insight into the mechanisms ruling this electronic transition. Two
spectral descriptors are found indicative of the onset of metallicity
and of the origin of the free carriers in the metallic state: the
absorbance spectral weight, whose abrupt increase defines the metallization
pressure threshold, and the asymmetric line shape of the E1u
peak, whose pressure evolution, interpreted within
the Fano model, suggests the electrons in the metallic state originate
from n-type doping levels. Combining our results with those reported
in the literature, we hypothesize a two-step mechanism is at work
in the metallization process, in which the pressure-induced hybridization
between doping and conduction band states drives an early metallic
behavior, while the band gap closes at higher pressures.