2004
DOI: 10.1364/josab.21.000744
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Infrared-to-visible upconversion of Er^3+ ions in GeO_2–PbO–Nb_2O_5 glasses

Abstract: We report the infrared-to-visible upconversion luminescence of Er 3ϩ -doped lead-niobium-germanate glasses (GeO 2 -PbO-Nb 2 O 5 ) with different Er 2 O 3 concentrations (0.5, 1, 2, and 3 wt.%) under continuous-wave and pulsed-laser excitation in the near-infrared region inside the 4 I 9/2 level. Intense green emission due to the ( 2 H 11/2 , 4 S 3/2 ) → 4 I 15/2 transitions was observed at room temperature together with a weak red emission corresponding to the 4 F 9/2 → 4 I 15/2 transition. These upconversion … Show more

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Cited by 61 publications
(41 citation statements)
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“…In the near-infrared spectral region, Er 3+ has a favorable energy level structure with 4 I 15/2 ? 4 I 11/2 transition, which can be easily excited when using a 978 nm semiconductor laser diodes (LD) as excitation source [4]. However, the relatively low absorption cross-section of about 1.7 9 10 -21 cm 2 made the ground state absorption (GSA) of Er 3+ at 978 nm very weak, leading to reduction of the emission intensity and pump efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…In the near-infrared spectral region, Er 3+ has a favorable energy level structure with 4 I 15/2 ? 4 I 11/2 transition, which can be easily excited when using a 978 nm semiconductor laser diodes (LD) as excitation source [4]. However, the relatively low absorption cross-section of about 1.7 9 10 -21 cm 2 made the ground state absorption (GSA) of Er 3+ at 978 nm very weak, leading to reduction of the emission intensity and pump efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…In the near-infrared spectral region, Er 3+ has a favorable energy level structure with 4 I 15/2 → 4 I 11/2 transition which can be easily excited by using a 978 nm semiconductor LD as the excitation source. Now, there are also considerable increasing interests to the characteristics of up-conversion emission of the Er 3+ doped materials for their potential applications in the fields of color display, optical data storage, biomedical diagnostics and temperature sensors [3][4][5][6] . Developing the Er 3+ doped optical devices, the influence factors of matrix being doped must be preferably considered, such as the dispersion of Er 3+ , luminescence efficiency, decay time, chemical durability, thermal stability, and mechanical strength.…”
mentioning
confidence: 99%
“…By taking into account both, spectral overlap and phonon energy of the host material, we evaluate their efficiency. F 9/2 ), whose existence has previously been proposed [85,132], and quantify its macroscopic ETU coefficient. Because of the rather high phonon energies in oxide host materials, such as Al 2 O 3 , the lifetimes of higher-lying Er 3+ levels are quenched by multiphonon relaxation, thereby diminishing the influence of processes originating in those levels on practical device performance.…”
Section: Discussionmentioning
confidence: 94%
“…In a number of publications [47,85,132,[136][137][138], the presence of the additional upconversion process ( Fig. 2.4 of Chapter 2, was suggested.…”
Section: Green Versus Red Luminescence Intensitiesmentioning
confidence: 99%
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