The Er 3+ doped Al 2 O 3 powders were prepared by the sol-gel method using the aluminium isopropoxide [Al(OC 3 H 7 ) 3 ]-derived Al 2 O 3 sols with addition of the erbium nitrate [Er(NO3 ) 3 . 5H 2 O]. The different phase structure, including three crystalline types of (Al,Er) 2 O 3 phases, γ, θ, α, and two Er-Al-O phases, ErAlO 3 and Al 10 Er 6 O 24 , was obtained with the 1 mol% Er 3+ doped Al 2 O 3 powders at the different sintering temperatures of 600-1200℃. The green and red up-conversion emissions centered at about 523, 545 and 660 nm, corresponding respectively to the 2 H 11/2 , 4 S 3/2 → 4 I 15/2 and 4 F 9/2 → 4 I 15/2 transitions of Er 3+ , were detected by a 978 nm semiconductor laser diodes excitation. The phase structure and OH content had evident influence on the up-conversion emissions intensity. The maximum intensities of both the green and red emissions were obtained respectively for the Er 3+ doped Al 2 O 3 powders sintered at 1200 ℃, which was composed mainly of α-(Al,Er) 2 O 3 , less of ErAlO 3 and Al 10 Er 6 O 24 phases, and with the least OH content. The two-photon absorption up-conversion process was involved in the green and red up-conversion emissions of the Er 3+ doped Al 2 O 3 powders. Er 3+ doping, up-conversion, Al 2 O 3 , excited state absorption, cross-relaxationRecently, rare-earth ion Er 3+ doped materials play an important role due to their potential application in optical communication [1,2] . The infrared sources can achieve a high efficiency with the advances in both solid-state laser and semiconductor laser diodes (LD). As a result, up-conversion emission, where the absorption of two or more lower energy photons is followed by the emission of a higher energy photon, has received significant attention. Due to the availability of low-cost near-infrared LD, conversion of infrared radiation to visible fluorescence generates much of the current interests in upconversion emission. In the near-infrared spectral region, Er 3+ has a favorable energy level structure with 4 I 15/2 → 4 I 11/2 transition which can be easily excited by using a 978 nm semiconductor LD as the excitation source. Now, there are also considerable increasing interests to the characteristics of up-conversion emission of the Er 3+ doped materials for their potential applications in the fields of color display, optical data storage, biomedical diagnostics and temperature sensors [3][4][5][6] . Developing the Er 3+ doped optical devices, the influence factors of matrix being doped must be preferably considered, such as the dispersion of Er 3+ , luminescence efficiency, decay time, chemical durability, thermal stability, and mechanical strength. Extensive researches of the properties of the Er 3+ doped Al 2 O 3 indicated that Al 2 O 3 is more appropriate as the Er 3+ doped matrix [1,[7][8][9][10] . Though the Er 3+ doped Al 2 O 3 material has previously been prepared by many methods, and their corresponding researches concentrated on infrared emission centered at about 1.533 μm for optical amplifier have been reported...