Infusion processing for advanced transistor manufacturing

Abstract

Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture Source Drain Extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusion™ 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination.