InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

Volkov, N. A.; Bagaev, T. A.; Сабитов, Д. Р.; Andreev, A. L.; Yarotskaya, I. V.; Падалица, А. А.; Ладугин, М. А.; Маrmalyuk, А. А.; Bakhvalov, K. V.; Veselov, D. A.; Lyutetskii, A. V.; Rudova, N. A.; Strelets, V.A.; Slipchenko, S. O.; Pikhtin, N. A.

doi:10.1070/qel17628

Quantum Electron.

2021

DOI: 10.1070/qel17628

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

N. A. Volkov¹,

T. A. Bagaev²,

Д. Р. Сабитов³

et al.

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Cited by 2 publications

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Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)

Volkov¹,

Telegin²,

Gul'tikov³

et al. 2022

Quantum Electron.

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The purpose of this work is to improve the current–voltage (I–V) performance of semiconductor lasers based on broadened asymmetric waveguide InGaAs/AlGaAs/GaAs separate-confinement double heterostructures. We analyse the effect of AlGaAs waveguide layer composition on the output characteristics of the lasers and demonstrate that the decrease in the series resistance of the lasers and the threshold voltage of their I–V characteristic as a result of a decrease in the percentage of AlAs in the waveguide layers shifts the drop in the differential quantum efficiency of the lasers to higher pump currents, despite the decrease in the energy depth of the quantum wells in the active region.

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Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)

Volkov¹,

Telegin²,

Gul'tikov³

et al. 2022

Quantum Electron.

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Semiconductor Lasers with Improved Lasing Characteristics

Danilov,

Ivanov,

Konyaev

et al. 2023

Bull. Lebedev Phys. Inst.

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

Cited by 2 publications

References 19 publications

Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)

Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)

Semiconductor Lasers with Improved Lasing Characteristics

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