InGaAs-based high-performance p-i-n photodiodes

Abstract

In this letter, we have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz

High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

“…High performance infrared RCE-PDs using AlGaAs and InGaAs material systems were previously reported [14] [15] [16]. Recently, Kishino et al have demonstrated the first UV RCE-PD with an AlGaN-based MSM PD, where they have reported resonant peaks around 360 nm [17].…”

High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes

“…14 -18 This technique can also be used to improve the efficiency performance of LT-GaAs-based photodetectors. Previously, we had demonstrated GaAs-based RCE Schottky-barrier internal photoemission photodetector operating at 1.3 m. 3 In this work we demonstrate LT-GaAs based RCE photodetectors with high-speed operation at 1.55 m.…”

“…To overcome this limitation and to use GaAs-based detectors in the 1.3-1.6 m wavelength region, mainly two detector structures were offered: Schottky-barrier internal photo-emission photodetectors and low-temperature-grown GaAs ͑LT-GaAs͒-based photodetectors. 3,4 It was shown that LT-GaAs was able to absorb long-wavelength signals due to midgap defects or As precipitates. 5 Moreover, subpicosecond carrier trapping time in LT-GaAs was also demonstrated.…”

Optoelectronic Devices Employing One-Dimensional Photonic Structures

“…Since the refractive index contrast for the InP lattice match InAlAs and InGaAs is low the RCE-PD requires elevated number of the high/low index layer pairs, the most noble example of such device is in Ref. [8]. Here an alternative heterostructure was proposed and fabricated [9].…”