InGaAs focal plane array developments at III-V Lab

Rouvie, A.; Reverchon, Jean-Luc; Huet, O.; Djedidi, Anis; Robo, J. A.; Truffer, J. P.; Bria, Toufiq; Pires, M. P.; Décobert, J.; Costard, E.

doi:10.1117/12.921134

Cited by 22 publications

(15 citation statements)

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“…The numerical calculation yields D Ã ¼ 1 Â 10 13 cm ffiffiffiffiffiffi Hz p W À1 for k ¼ 1:55 lm, a value close to that of today's best devices. [7][8][9] This is the maximum detectivity we can typically achieve with our structure. To go further and achieve still better performances, growth conditions will have to be improved, in order to reduce traps and determine another tradeoff with a thinner active region.…”

Section: Active Region Thicknessmentioning

confidence: 97%

“…With this geometry, we would expect to reduce the dark current by at least one order of magnitude compared with the state of the art of InGaAs photodiodes. [7][8][9] Being the simplest material in this system, InP is a good candidate as the wide bandgap material in these heterojunctions. Unfortunately, it has two major drawbacks for InGaAs/InP stacks grown by MOVPE.…”

Section: -9mentioning

confidence: 99%

“…6 Despite the outstanding performances achieved by today's InGaAs detectors, there have been few advances in recent years. [7][8][9] SWIR InGaAs photodiodes can be seen as a model for the development of the fourth generation of infrared detectors.…”

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confidence: 99%

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Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Verdun

Beaudoin

Portier

et al. 2016

Journal of Applied Physics

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We investigated the dark current components of thin planar InGaAs photodiodes grown by metalorganic vapor-phase epitaxy for optical nano-resonators. Owing to their high electric field enhancement, nano-resonators make it possible to substantially reduce the thickness of the active region to about 100 nm all the while maintaining high quantum efficiency. In the present study, to cover a broad spectral band, we combined several resonance peaks induced by guided-mode resonances in a given spectral range. This type of geometry allowed us to introduce InAlAs at the edge of a thin InGaAs active region in order to drastically reduce both the diffusion current and the generation/recombination current. We found that, in such devices, tunneling dark current components increase as the thickness of the active layer is reduced and dominate the reverse dark current. By optimizing the epitaxial stack, while keeping its total thickness constant (the optical properties of the nano-resonator remained unchanged), we showed that we are already able to achieve a specific detectivity of up to 1×1013 cmHz W−1 for λ=1.55 μm.

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Section: Active Region Thicknessmentioning

confidence: 97%

Section: -9mentioning

confidence: 99%

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Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Verdun

Beaudoin

Portier

et al. 2016

Journal of Applied Physics

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“…Most of these studies based on III-V materials especially InGaAs [1][2][3] . Moreover, increasing the range of detector is popular research area among these recent studies [4][5][6][7] .…”

Section: Introductionmentioning

confidence: 99%

Implementation of high-dynamic range pixel architecture for SWIR applications

et al. 2014

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This paper presents novel unit cell architecture for short wave infrared (SWIR) imaging applications. It has two input stages which are CTIA and SFD covering for both respectively low and high light, levels and automatic input stage selection circuitry that chooses best input stage. User can select 2 modes for FPA manual and automatic mode. In manual mode, user can set CTIA or SFD for all pixels according to user needs. In automatic mode, each pixel selects input stage itself according to light level. Light level threshold can be adjusted with reference voltage. Automatic input stage selection for each pixel brings high SNR level and low noise along with highest possible dynamic range for SWIR imaging applications. CMOS 0.18μm technology is used to realize unit cell. In the architecture of unit cell, circuit level techniques are used to optimize layout size.

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“…As consequence of the extended spectrum response of InGaAs devices, it can respond and absorb more light and energy for the night glow irradiation, then quantum efficiency and device performance get improvement compared with conventional low-light vacuum devices. So it has been thought as new candidate of solid-state low-light devices [1][2][3][4][5] . The wide spectrum response from 0.4μm to 1.7μm of InGaAs devices made it as the powerful detector for 1.06μm and 1.55μm laser based detecting, tracing, communication, laser-assisted detecting and imaging, three-dimensional (3D) imaging.…”

Section: Introductionmentioning

confidence: 99%

320×256 InGaAs solid state low-light devices

Shi¹,

Lu²,

Hu³

et al. 2014

SPIE Proceedings

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The InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime. It has gained vital development and application in the world. 320×256 InGaAs solid-state low-light devices has been prepared and studied, the p-i-n material structure was grown by MOCVD system. The mesa device structure was chosen and fabricated by inductively coupled plasma (ICP) method. The detector chip and CMOS readout integrated circuit was bonded by flip-chip bonding. The FPAs was packaged to Dewar which temperature could be changed by temperature controller. Both performances of single element device and focal plane arrays were studied in detail. Very simple optics lens was adopted to show the imaging of 1.064μm laser spot and hand. Study results disclose feasible material growth, devices processing and high temperature operation characteristics of InGaAs devices.

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InGaAs focal plane array developments at III-V Lab

Cited by 22 publications

References 0 publications

Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Implementation of high-dynamic range pixel architecture for SWIR applications

320×256 InGaAs solid state low-light devices

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