InGaAs/graphene infrared photodetectors with enhanced responsivity

Qian-Sheng, Yang; Wu, Qiming; Luo, Wei; Yao, Wei; Yan, Shunya; Shen, Jun

doi:10.1088/2053-1591/ab4925

Cited by 34 publications

(16 citation statements)

References 37 publications

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“…Even so, the value of D* could reach up to 410 11 cm Hz 1/2 W À1 under all gate voltages. To benchmark our device, we compared graphene-based high-performance hybrid phototransistors using various strategies, including charge-transfer assistance, 8,10,28,[37][38][39][40][41] substrate engineering, [42][43][44] tunneling assistance, [45][46][47] a vertical structure, 48,49 and contact engineering, 5,50,51 as summarized in Fig. 5d.…”

Section: Resultsmentioning

confidence: 99%

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Qin

et al. 2022

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Qin

et al. 2022

J. Mater. Chem. C

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“…Recently, Yang et al developed the graphene/InGaAs hybrid photodetector. [ 130 ] They found that the photoresponsivity of graphene/InGaAs photodetector can be increased by 14.7 times (7.66 A W −1 ) than the pure InGaAs photodetector along with response time 2 times faster in 1550 nm at ambient conditions. Table 6 gives a summary of some of the graphene photodetectors with their performances.…”

Section: Applications Of Graphenementioning

confidence: 99%

Recent Developments in Chemical Doping of Graphene using Experimental Approaches and Its Applications

Singh

Singh²,

Singh

2022

Adv Eng Mater

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Graphene has been widely investigated and applied in almost all areas of science and technology. Modulation of graphene properties is needed for its potential utilization in various applications. Chemical doping is one of the most attractive and efficient strategies to alter graphene properties. To date, substantial progress in this area has been reported, which needs to be thoroughly reviewed for its effective implementation in the development of commercial products in the days to come. This article presents a systematic, critical, and more informative review of the recent advancement in the chemical doping of graphene and its applications. Starting with a brief history along with the properties and synthesis of graphene, different experimental approaches to chemical doping and their outcomes reported so far are systematically documented. Further, extensive studies based on potential applications of doped graphene in various fields including light‐emitting diodes, photodetectors, solar cells, energy storage devices, sensors, and medical diagnoses are discussed and presented. Finally, the study is concluded with discussions on future prospective research work in this area.

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“…On the other hand, for Si-based OEIC, the Si-based light source is the ultimate obstacle to achieve owing to the fact that Si is an indirect band-gap semiconductor material, and its emission efficiency is very low, which makes it unavailable as the active gain medium for Si-based high-efficient light sources. In contrast, most group III-V materials are definitely suitable for the optoelectronic devices in light-emitting/absorbing devices, including light-emitting diodes (LEDs), lasers, and detectors [ 11 , 12 , 13 , 14 ], owing to their direct bandgap properties, indicating their stronger photon emission and absorption efficiency in comparison than indirect semiconductors such as Si, Ge [ 15 , 16 ], and GeSn [ 17 ]. Thus, taking advantage of the excellent properties of III-V compounds, Si-based III-V CMOS devices and III-V photoelectric devices can further greatly improve the data transmission speed and amount, which effectively reduce integrated electricity and power consumption [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Wang

et al. 2022

Nanomaterials

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Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized

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InGaAs/graphene infrared photodetectors with enhanced responsivity

Cited by 34 publications

References 37 publications

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Recent Developments in Chemical Doping of Graphene using Experimental Approaches and Its Applications

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

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