InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

Aoki, Masahiro; Suzuki, Makoto; Sano, Hiroyasu; Kawano, Toshihiro; Ido, T.; Taniwatari, T.; Uomi, K.; Takai, A.

doi:10.1109/3.234473

Cited by 169 publications

(49 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…), external modulators that can generate nearly transform-limited chirp-free waveforms are generally used. Two kinds of modulators are commonly used for high-rate intensity modulation: Mach-Zehnder modulators (MZMs), which are interferometric based devices; and semiconductor-based electro-absorption modulators (EAMs) (see, e.g., [274][275][276][277]). EAMs are compact, offer ease of integration with other elements such as lasers and semiconductor optical amplifiers (SOAs), and can be cost-effective for wide-band intensity modulation transmitters.…”

Section: Modulationmentioning

confidence: 99%

Laser communication transmitter and receiver design

Caplan

2007

J Optic Comm Rep

118

View full text Add to dashboard Cite

Free-space laser communication systems have the potential to provide flexible, high-speed connectivity suitable for long-haul intersatellite and deep-space links. For these applications, power-efficient transmitter and receiver designs are essential for cost-effective implementation. State-of-the-art designs can leverage many of the recent advances in optical communication technologies that have led to global wideband fiber-optic networks with multiple Tbit/s capacities. While spectral efficiency has long been a key design parameter in the telecommunications industry, the many THz of excess channel bandwidth in the optical regime can be used to improve receiver sensitivities where photon efficiency is a design driver. Furthermore, the combination of excess bandwidth and average-power-limited optical transmitters has led to a new paradigm in transmitter and receiver design that can extend optimized performance of a single receiver to accommodate multiple data rates. This paper discusses state-of-the-art optical transmitter and receiver designs that are particularly well suited for average-power-limited photon-starved links where channel bandwidth is readily available. For comparison, relatively simple direct-detection systems used in short terrestrial or fiber optic links are discussed, but emphasis is placed on mature high-performance photon-efficient systems and commercially available technologies suitable for operation in space. The fundamental characteristics of optical sources, modulators, amplifiers, detectors, and associated noise sources are reviewed along with some of the unique properties that distinguish laser communication systems and components from their RF counterparts. Also addressed is the interplay between modulation format, transmitter waveform, and receiver design, as well as practical tradeoffs and implementation considerations that arise from using various technologies.

show abstract

Section: Modulationmentioning

confidence: 99%

Laser communication transmitter and receiver design

Caplan

2007

J Optic Comm Rep

118

View full text Add to dashboard Cite

show abstract

“…The SAG technique can be used effectively to provide multiple band edges across the epitaxial wafer in a single growth step [5] . This method involves patterning of a dielectric mask on the epiwafer, which is followed by the epitaxial growth (e.g., metal organic chemical vapor deposition [MOCVD] growth).…”

Section: Selective Area Growth ( Sag )mentioning

confidence: 99%

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

Erdem

Demir

2011

Ceramic Integration and Joining Technologies

View full text Add to dashboard Cite

“…Selective area MOVPE is more desirable than other techniques for fabricating integrated MQW-based photonic devices; it enables generation of different quantum levels of the MQW structure in a wafer by simply changing the dielectric mask geometry in a single growth step [1][2][3][4]. Selective MOVPE in a narrow stripe region also enables direct production of a waveguide, without use of a semiconductor etching process.…”

Section: Introductionmentioning

confidence: 98%