InGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications

Abstract

For many modern day portable electronic applications, low pow high speed devices have become very desirable. Very high values offr and have been reported with InGaAshP heterojunction bipolar transistors (HBTs), but only under high bias and high current level operating conditions. An InGaAsAnP ultra-low power HBT with MAX greater than 10 GHz operating at less than 20 pA has been reported for the first time in this work. The results are obtained on a on a 2. 5~5 pm2 device, corresponding to less than 150 A/cm2 of current density. These are the lowest current levels at whichfMa 2 10 GHz has been reported.