InGaAs–InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and<tex>$f_tau$</tex>,<tex>$f_max≫268$</tex>GHz

Abstract

InP-In 0 53 Ga 0 47 As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP-employed because of its high thermal conductivity to minimize device heating. An and max of 268 and 339 GHz were measured, respectively-both records for metamorphic DHBTs. A 70-nm SiO 2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain is 35 and BR CEO = 5 7 V. The collector leakage current cbo is 90 pA at cb = 0 3 V. These values of , max , cbo , and are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate. Index Terms-Heterojunction bipolar transistor (HBT), lattice matched, metamorphic growth.

Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate

“…The structure of InGaAs MM-PINPD is similar as previous reports except the whole structure were grown on semiinsulating substrate [11]. The metamorphic buffer absorbs the strain of lattice mismatch and prevents the vertical propagation of dislocations, thereby maintaining the quality of the device active layers.…”

Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs

“…The structure of InGaAs MM-PINPD is similar as previous reports except the whole structure was grown on semi-insulating substrate [15]. The metamorphic buffer absorbs the strain of lattice mismatch and prevents the vertical propagation of dislocations, thereby maintaining the quality of the device active layers.…”

Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

“…The heteroepitaxy of III-V alloys, lattice-matched to InP, onto mismatched substrates, such as GaAs and Si substrates, have drawn much attention for both electronic and optoelectronic applications. These material combinations take advantage of a lower substrate cost and epitaxial growth on larger available wafer, as well as for the compatibility with the existing high volume Si-based CMOS technology and monolithic integration onto the Si-based optoelectronic platform [1][2][3][4][5][6][7][8][9]. However, the high defect density, originating from the large mismatch in either lattice constant and/or thermal expansion coefficient [10] between GaAs/InP or Si/InP, has remained as a challenging factor limiting the device performance and reliability [11].…”