1994
DOI: 10.1051/jp3:1994281
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InGaAs/InP multiple quantum well modulators in experiment and theory

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Cited by 1 publication
(2 citation statements)
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“…4 show greater barrier height in the valence band, suggesting recombination is limited by holes. The wavefunction overlap is lower in the ASQW, which reduces the overall absorption magnitude, but may have benefits for detection through increased recombination lifetime [37], and for modulation through reduced insertion loss. The height of the step in the ASQW valence band is 43meV lower than the barrier in the SQW structure, which may also assist thermal escape [28], [29].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4 show greater barrier height in the valence band, suggesting recombination is limited by holes. The wavefunction overlap is lower in the ASQW, which reduces the overall absorption magnitude, but may have benefits for detection through increased recombination lifetime [37], and for modulation through reduced insertion loss. The height of the step in the ASQW valence band is 43meV lower than the barrier in the SQW structure, which may also assist thermal escape [28], [29].…”
Section: Resultsmentioning
confidence: 99%
“…πœ‚, and hence responsivity, 𝑅, were highly sensitive to 𝜏 π‘Ÿ,𝑖 , which had high uncertainty and was used as a fitting parameter in external quantum efficiency studies [35]. 𝜏 π‘Ÿ,𝑖 is directly proportional to temperature [36], inversely proportional to wavefunction overlap [37], and observed to be larger with the removal of aluminimum based alloys [26], [27]. Though these considerations were expected to increase 𝜏 π‘Ÿ,𝑖 in ASQW structures there was a large range of values from 0.1ns-1.5ΞΌs reported for varying structures in [18], [33], [35].…”
Section: F Parameterizationmentioning
confidence: 99%