InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Park, Min Su; Rezaei, Mohsen; Nia, Iman Hassani; Brown, Robert L.; Bianconi, Simone; Tan, Chee Leong; Mohseni, Hooman

doi:10.1364/ome.8.000413

Cited by 22 publications

(14 citation statements)

References 21 publications

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“…16 Wafer bonding of III−V's on metal is an alternative approach to remove this constraint; however, it also suffers from the limited size of III−V epitaxial substrates and thus does not remove the barrier for potential large area applications. 17,18 Here, we demonstrate an InAs-based thermal metasurface for the mid-infrared range. Metasurface design was carried out using FDTD simulations, and implementation was carried out using direct growth of InAs on metal.…”

Section: Introductionmentioning

confidence: 93%

“…In addition, inserting a metal mirror under the grown layer is not possible and a heavily doped thin film must be used as a reflector layer . Wafer bonding of III–V’s on metal is an alternative approach to remove this constraint; however, it also suffers from the limited size of III–V epitaxial substrates and thus does not remove the barrier for potential large area applications. , …”

Section: Introductionmentioning

confidence: 99%

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Monolithic III–V on Metal for Thermal Metasurfaces

et al. 2022

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It has been proposed that metal–semiconductor–metal (MSM) structures can be used to tune the absorptivity of a metasurface at infrared wavelengths. Indium arsenide (InAs) is a low-band-gap, high-electron-mobility semiconductor that may enable rapid index tuning for dynamic control over the infrared spectrum. However, direct growth of III–V thin films on top of metals has typically resulted in small-grain, polycrystalline materials that are not amenable to high-quality devices. Previously, epitaxial wafers were used for this purpose. However, the epitaxial constraints required that InAs be used for both the tuning layer and the bottom “metallic” layer, limiting the range of accessible designs. In this work, we show a demonstration of direct growth of single-crystalline InAs on metal to build tunable absorbers/emitters in the infrared regime. The growth was carried out at a temperature of 300 °C by the low temperature templated liquid phase (LT-TLP) method. The size of InAs single-crystalline mesas is ∼2500 μm2, enabling the desired device sizes. The proposed growth and device enable scalable and tunable infrared devices for various thermal-photonic applications.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Monolithic III–V on Metal for Thermal Metasurfaces

et al. 2022

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“…Such a combination is based on van der Waals forces. Usually, the substrate is deposited with a layer of nonadhesive agent, such as oxide, [172][173][174] metal [175,176] or III-V material. [177,178] Figure 15 shows one example of direct wafer bonding.…”

Section: Wafer/die Bonded Iii-v Photodetectorsmentioning

confidence: 99%

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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“…On the other hand, the wafer bonding technology can be achieved on any substrate whose surface is atomically flat. Most of all, the material characteristics do not change after the wafer bonding process and epitaxial lift-off (ELO) [8]- [11]. Metal wafer bonding (MWB) has an advantage of using a very thin gold layer of ∼20 nm, relying on the Van-der-Waals force, as compared to gold metal eutectic bonding which needs a thick gold layer of more than 200 nm.…”

Section: Introductionmentioning

confidence: 99%

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

et al. 2019

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In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs having a different cavity length of 1.7, 2.8, 3, and 3.4 μm were fabricated and compared with simulation based on the finite-difference time-domain method. The resonance peaks were observed in both photocurrent spectrum and absorption spectrum due to the microcavity formed by the bottom mirror of Pt/Au layer and the flat GaAs/air interface. The peak wavelength of the photocurrent spectrum in all four QDIPs on Si samples shows a good agreement with the simulated absorption spectrum. The bias-dependent photocurrent was also measured to study the microcavity effects more in depth. The ratio of the increased photocurrent under bias condition shows higher value in the microcavity QDIPs, showing that the microcavity contributes to generate photocurrent effectively. From these results, we believe that the MWB and ELO could be useful to make the microcavity in many integrated chemical and biosensing application.

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InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Cited by 22 publications

References 21 publications

Monolithic III–V on Metal for Thermal Metasurfaces

Monolithic III–V on Metal for Thermal Metasurfaces

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

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