InGaAs self-assembly quantum dot for high-speed 1300nm electroabsorption modulator

Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure

“…The QCSE linear redshift goes from 955.8 meV to 946.4 meV and it is in the same order of magnitude found in previous studies [7], [10]. The maximum extinction ratio is 4.1 dBmm -1 and it is in agreement with measurements performed in [10] and [11]. In Fig.…”

“…One of the most used effects in electroabsortion modulation is the quantum confined Stark effect (QCSE). The QCSE was studied in InAs quantum dots [5][6][7][8][9] and there are several modulator designs [10][11]. To the best of our knowledge, most of them were not optimized to maximize device performance, E.g.…”

“…To the best of our knowledge, most of them were not optimized to maximize device performance, E.g. Lin et al demonstrated an InAs QD electroabsorption modulator with a bandwidth of 3.3 GHz at 1300 nm in [10]. Another example is [11] where a maximum bit-rate of 2.5 Gbs -1 is reached.…”

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

“…The 𝑄𝐶𝑆𝐸 is present in both 𝑄𝐷𝑠 and 𝑄𝑊 𝑠 [8][9][10][11][12][13][14][15][16]. One of the advantages of 𝑄𝐷𝑠 devices is that they are more resilient than 𝑄𝑊 devices when growing them over 𝑆𝑖 since the 𝑄𝑊 𝑠 are always affected by defects arising from the material lattice mismatch and different thermal expansion coefficients.…”

“…On the other hand, 𝑄𝐷𝑠 offer the prospect of significant electro-optic coefficients and steeper absorption edges due to their confined nature [1]. For example, the work in [8] demonstrated that the 𝑄𝐶𝑆𝐸 in 𝑄𝐷𝑠 can achieve comparable 𝐸 𝑅𝑠 to 𝑄𝑊 𝑠 despite having a lower density of states by two orders of magnitude. This result highlighted the strong 𝑄𝐶𝑆𝐸 in 𝑄𝐷 structures due to their increased carrier confinement and suggested their potential for high-performance 𝐸 𝐴𝑀 𝑠.…”