InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal

Abstract

Articles you may be interested inAtomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs (001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2 J. Chem. Phys. 136, 154706 (2012); 10.1063/1.4704126Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition Initiation of a passivated interface between hafnium oxide and In ( Ga ) As ( 0 0 1 ) − ( 4 × 2 )Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In 0.2 Ga 0.8 As and deposition of ultrathin Al 2 O 3 gate insulators Using in situ atomic scale imaging with scanning tunneling microscopy/spectroscopy, a combination of atomic hydrogen dosing, annealing, and trimethyl aluminum dosing is observed to produce an ordered unpinned passivation layer on an air exposed InGaAs(001)-(4 Â 2) surface with only monatomic steps. This shows that conventional gate-last semiconductor processing can be employed to fabricate a variety of electronic devices, even on air exposed compound semiconductors.

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

“…To reduce the large trap densities at interfaces between In 0.53 Ga 0.47 As and the gate dielectric (typically Al 2 O 3 or HfO 2 ), various surface preparation and passivation methods are currently being investigated. [1][2][3][4][5][6][7][8][9] Interface trap densities (D it ), at least around midgap, are relatively straight-forward to detect for In 0.53 Ga 0.47 As, because of its narrow band gap (0.75 eV (Ref. 10)); they cause, for example, a frequency-dependent hump in the depletion region of capacitance-voltage (CV) characteristics, 11,12 and peaks in normalized conductance maps.…”

Chemical and electrical characterization of the HfO2/InAlAs interface

“…2 In surface channel metal oxide semiconductor (MOS) FET devices, As decapping, wet chemical processing using, for example, HF, HCl, NH 4 OH, [3][4][5] atomic hydrogen treatments, 6,7 as well as sulphur 8,9 and nitrogen passivations 10,11 have all been employed in order to remove native oxides and diminish the interaction between any deposited oxide and the semiconductor. However, while these processes have all shown improvements in device performance, the D it levels are still too high to make the incorporation of a III-V channel a viable alternative to Si in the short term.…”

(Invited) Rapid In-Situ Carbon and Oxygen Cleaning of In0.53Ga0.47As(001) and Si0.5Ge0.5(110) Surfaces via a H2 RF Downstream Plasma

“…Similarly to the mechanism of forming AsH 3 on the surface, it has also been reported that Ga 2 O 3 and As 2 O 3 can be reduced to more volatile products by forming an H 2 O reaction product when atomic H reacts on the surface (3,(13)(14)(15). It was expected that removal of these volatile byproducts would be even easier due to having substoichiometric oxides on the surface.…”