InGaAsSb negative luminescent devices with built-in cavities emitting at

Remennyi, M. A.; Matveev, B. A.; Zotova, N. V.; Karandashev, S. A.; Stus, N. M.; Talalakin, G. N.

doi:10.1016/j.physe.2003.09.007

Cited by 15 publications

(4 citation statements)

References 7 publications

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“…The measurements of the near field by a movable fibre probe similar to the used in [4] displayed good confinement of the radiation above the mesa with negligible escape of the output through the side chip walls or areas rather than mesa as shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 88%

Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface

Matveev

Zotova

Il’inskaya

et al. 2005

phys. stat. sol. (c)

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The paper presents results on spectral and power measurements in InAsSbP/InAs double heterostructure flip-chip LEDs with cavity formed by bottom anode mirror and air/semiconductor interface in the temperature range of 77-573 K. Data on near and far field patterns in the 3 µm range together with the threshold characteristincs of the L-I curves are discussed with respect to resonant cavity effects at 77-573 K and stimulated emission at 77 K in the direction perpendicular to the p-n junction.1 Introduction There has been remarkable progress in the performance of the mid-IR LEDs and diode lasers that can be used for optical methane and carbon dioxide detection in the 3.3-4.3 µm spectral band. Unfortunately the emission spectrum of the above diodes is strongly effected by the temperature change that is not appropriate for many applications. On the other hand creation of interaction of exited states and a microcavity whose planes are parallel to the p-n junction enables to achieve temperature insensitive wavelength position with subsequent increase of the output power. The corresponding resonant cavity LEDs (RC LEDs) and vertical cavity surface emitting lasers (VCSELs) are known for the near infrared spectral region while there are only few publications on electrically pumped RC LEDs [1,2] and optically pumped VCSELs [3] in the mid-IR 3-5 µm range. To the best of our knowledge there have been no report on electrically pumped III-V VCSELs operating in the 3 µm range.The report will describe resonant cavity features of emission of the electrically injected diodes in the 2.9-4.3 µm spectral range in the 77-573 K range with the output escaping perpendicular to the p-n junction in double heterostructure (DH) diodes with InAs active layer including measurements of stimulated emission at 77 K.

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Section: Resultsmentioning

confidence: 88%

Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface

Matveev

Zotova

Il’inskaya

et al. 2005

phys. stat. sol. (c)

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“…Other groups have also documented the numerous potential applications of NL devices [4], which include dynamic cold shields for focal plane arrays, infrared scene projection systems, and active reference planes for thermal detectors. Over the past few years, researchers have demonstrated negative luminescence effects in various infrared material systems including InGaAsSb [5], type-II InAs/InAsSb [6], InAs/GaSb [7], HgCdTe [8][9] [10], and InSb/InAlSb [11].…”

Section: Introductionmentioning

confidence: 99%

Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes

Hoffman¹,

Razeghi²

2006

SPIE Proceedings

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Recently, several groups have investigated the aspects of positive and negative luminescence behavior in infrared materials. Under forward bias voltage, charge carriers are injected into the active region of a p-n junction, giving rise to positive luminescence. In contrast, a p-n junction under reverse bias conditions can exhibit negative luminescence caused by a reduction of the electron-hole recombination of the device, such that the photon flux is below that of the black body emission in equilibrium.In the present work, we show measurements of both positive and negative luminescence of binary Type II InAs/GaSb superlattice photodiodes in the 3 to 13 µm spectral range. Through a radiometric calibration technique, we demonstrate temperature independent negative luminescence efficiencies of 45 % in the midwavelength (MWIR) sample from 220 K to 320 K without anti-reflective coating and values reaching 35 % in the long wavelength infrared (LWIR) spectrum sample. With the radiative recombination constant obtained in the framework of k ⋅ p theory a model is obtained to describe the temperature dependent behavior of the results near thermal equilibrium in both samples. In the long wavelength regime, we demonstrate that the dominant non-radiative recombination channel in n-type material is Auger recombination with an electron-hole-electron (CHCC) Auger recombination coefficient of C n = 1 x 10 24 cm 6 s -1 . While in the mid wavelength infrared window, the primary non-radiative recombination is ShockleyRead-Hall recombination giving rise to a p-type residual background capture cross-section of σ n = 7 x 10 -16 cm 2 .

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“…Such structures demonstrate interference peaks in the spectra of traditional (positive) interband luminescence [11]. The interference peaks of low amplitude were observed in the NL spectra [4,12,13]. Presence of interference features in the spectra of the resonator sources of positive and negative luminescence makes them similar to the resonator sources of TR whose radiation spectra also have peaks [14,15].…”

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confidence: 99%

Interference effects in negative luminescence and thermal radiation of planar semiconductor structures

Kollyukh

Liptuga

Morozhenko

et al. 2010

Journal of Luminescence

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InGaAsSb negative luminescent devices with built-in cavities emitting at

Cited by 15 publications

References 7 publications

Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface

Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface

Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes

Interference effects in negative luminescence and thermal radiation of planar semiconductor structures

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